Observation of Bloch conduction perpendicular to interfaces in a superlattice bipolar transistor

Palmier, J. F.; Minot, C.; Lievin, J. L.; Alexandre, F.; Harmand, J. C.; Dangla, J.; Dubon-Chevallier, C.; Ankri, D.
November 1986
Applied Physics Letters;11/10/1986, Vol. 49 Issue 19, p1260
Academic Journal
We report the first operating bipolar transistor built with an AlGaAs/GaAs superlattice base. High current gain is measured with a suitable design of the bipolar transistor structure. Experimental results are in good agreement with a Bloch to hopping transition which is very sensitive to the AlGaAs barrier thickness. This interpretation is supported by a detailed numerical simulation reproducing the static Ic(Vce,Ib) transistor transfer data.


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