Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxes

Cibert, J.; Petroff, P. M.; Dolan, G. J.; Pearton, S. J.; Gossard, A. C.; English, J. H.
November 1986
Applied Physics Letters;11/10/1986, Vol. 49 Issue 19, p1275
Academic Journal
Carrier confinement to one and zero degrees of freedom has been achieved in artificial quantum well wires and boxes fabricated in the GaAs-GaAlAs system. Low-temperature cathodoluminescence measurements show new luminescence lines attributed to transitions arising from ground and excited levels of electrons within these low dimensional structures.


Related Articles

  • Elliptically polarized pump-probe spectroscopy and its application to observation of electron-spin relaxation in GaAs quantum wells. Tianshu Lai; Luning Liu; Qian Shou; Liang Lei; Weizhu Lin // Applied Physics Letters;11/1/2004, Vol. 85 Issue 18, p4040 

    An elliptically polarized pump-probe spectroscopy is developed. A theoretical model is derived from the rate equations of two-level system with small signal approximation to describe the experimental signal of the spectroscopy. The spectroscopy eliminates the systematic errors between theories...

  • Carrier transport and recombination in resonantly excited InGaAs/GaAs MQWs. Aleksiejunas, Ramunas; Kadys, Arunas; Jarasiunas, Kestutis; Saas, Florian; Griebner, Uwe; Tomm, Jens W. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p461 

    We present nonlinear optical studies of the non-equilibrium carrier dynamics in InGaAs/GaAs quantum well structures. We exploit the free-carrier and electron spin-governed nonlinearities in pump-probe and four-wave mixing experiments to measure the carrier lifetime, spin relaxation time, and...

  • Optical properties of a Si delta-doped InGaN/GaN quantum well with ultraviolet emission. Kwon, Min-Ki; Park, Il-Kyu; Kim, Ja-Yeon; Kim, Jeom-Oh; Seo, Seong-Bum; Park, Seong-Ju; Min, Kyeongik; Park, Gil-Han // Journal of Applied Physics;Oct2007, Vol. 102 Issue 7, p073115 

    We report on the effect of the position of the Si delta-doped layer within a GaN barrier layer on the optical properties of a InGaN/GaN single quantum well (SQW) with an emission wavelength of 374 nm. When the Si delta-doped layer was very close to the SQW layer, the potential well of the Si...

  • Carrier trapping in single quantum wells with different confinement structures. Feldmann, J.; Peter, G.; Göbel, E. O.; Leo, K.; Polland, H.-J.; Ploog, K.; Fujiwara, K.; Nakayama, T. // Applied Physics Letters;7/27/1987, Vol. 51 Issue 4, p226 

    The trapping efficiency and trapping dynamics of photoexcited carriers in GaAs/AlGaAs single quantum wells with different confinement structures are examined at low temperature by means of picosecond luminescence as well as photoluminescence excitation spectroscopy. The trapping efficiency is...

  • Carriers induced at the end of a quantum well. Stern, Frank; Laux, Steven E. // Journal of Applied Physics;7/15/1992, Vol. 72 Issue 2, p809 

    Presents a study that calculated the charge distribution of carries induced at the end of a quantum well by an auxillary confining potential perpendicular to the plane of the well. Information on the notion of combining the tight confinement of carriers in a quantum well; Details of structures...

  • Carrier spillover at 300, 195, and 77 K in InGaAs and GaAs single quantum wells. Ongstad, Andrew P.; Tilton, Michael L.; Bochove, Erik J.; Dente, Gregory C. // Journal of Applied Physics;9/1/1996, Vol. 80 Issue 5, p2866 

    Presents a study that measured the carrier spillover at 300, 195 and 77 K in InGaAs and GaAs single quantum wells. Experimental procedure; Results of the study; Conclusions.

  • Systematic studies on the effect of growth interruptions for GaInAs/InP quantum wells grown by atmospheric pressure organometallic vapor-phase epitaxy. Wang, T. Y.; Reihlen, E. H.; Jen, H. R.; Stringfellow, G. B. // Journal of Applied Physics;12/1/1989, Vol. 66 Issue 11, p5376 

    Presents a study which examined GaInAs and InP quantum wells (QW) grown by using atmospheric pressure organometallic vapor-phase epitaxy with and without interruptions at the interfaces. Growth characterization of QW structures; Growth of single-monolayer QW using growth interruptions;...

  • Degradation and lifetime studies of high-power single-quantum-well AlGaAs ridge lasers. Gfeller, F. R.; Webb, D. J. // Journal of Applied Physics;7/1/1990, Vol. 68 Issue 1, p14 

    Discusses the result of degradation studies of high-power single-quantum-well aluminum gallium arsenide ridge lasers. Details of possible degradation mechanisms inherent to the ridge structure; Determination of gradual degradation and catastrophic failures.

  • Optical characteristics of 1.55 μm GaInNAs multiple quantum wells. Sun, H.D.; Clark, A.H.; Liu, H.Y.; Hopkinson, M.; Calvez, S.; Dawson, M.D.; Qiu, Y.N.; Rorison, J.M. // Applied Physics Letters;11/1/2004, Vol. 85 Issue 18, p4013 

    We report the optical characterization of high-quality 1.55 μm GaxIn1-xNyAs1-y multiquantum wells (MQWs), grown on GaAs with Ga(In)N0.01As spacer layers. The transitions between the quantized QW states of the electrons and holes have been identified using photoluminescence excitation...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics