Time-resolved reflectivity measurements during explosive crystallization of amorphous silicon

Bruines, J. J. P.; van Hal, R. P. M.; Boots, H. M. J.; Polman, A.; Saris, F. W.
November 1986
Applied Physics Letters;11/3/1986, Vol. 49 Issue 18, p1160
Academic Journal
Explosive crystallization of Cu implanted amorphous silicon during irradiation by a 32-ns FWHM ruby laser pulse has been studied using time-resolved reflectivity measurements and Rutherford backscattering spectrometry. From interferences in the reflectivity, the position and the velocity of the self-propagating melt have been deduced as a function of time. A maximum average velocity of 13±2 m/s has been obtained. The reflectivity behavior indicates the presence of crystalline nuclei in the melt.


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