TITLE

Wide-gap boron-doped microcrystalline silicon nitride

AUTHOR(S)
Hasegawa, S.; Segawa, M.; Kurata, Y.
PUB. DATE
November 1986
SOURCE
Applied Physics Letters;11/3/1986, Vol. 49 Issue 18, p1178
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Microcrystalline SiNx:H films were prepared by rf glow discharge of SiH4-B2H6-N2-H2 mixtures with the gas volume ratio of B2H6/SiH4=4.5×10-3. The volume fraction of the crystalline phase and the crystallite size decrease with an increase in N content x, and the films were amorphous at x above 0.2. The dark conductivity σd decreases and the optical gap Eg increases with x. The gap-state density is lowest at x near 0.2, where σd∼10-2–10-3/Ω cm (the activation energy is 0.1 eV) and Eg∼1.9 eV. These electrical properties are improved as compared with those for B-doped amorphous SiNx:H.
ACCESSION #
9821260

 

Related Articles

  • Atomic layer controlled deposition of silicon nitride with self-limiting mechanism. Goto, Hiroshi; Shibahara, Kentaro; Yokoyama, Shin // Applied Physics Letters;6/3/1996, Vol. 68 Issue 23, p3257 

    Describes the deposition of silicon nitride (SiN) films by atomic layer deposition (ALD) method with self-limiting mechanism. Preservation of the atomic roughness of the hydrogen terminated silicon surface; Process window for the half-molecular layer per cycle of growth; Fluctuations of ALD SiN...

  • Carrier recombination at silicon-silicon nitride interfaces fabricated by plasma-enhanced... Schmidt, Jan; Aberle, Armin G. // Journal of Applied Physics;4/1/1999, Vol. 85 Issue 7, p3626 

    Investigates the injection level dependent effective surface recombination velocity (SRV) at the silicon-silicon nitride interface. Use of monocrystalline silicon wafers in the investigation; Input parameters of the simulation; Explanation for the reduction of the positive insulator charge...

  • Photoluminescence of Si[sub 3]N[sub 4] films implanted with Ge[sup +] and Ar[sup +] ions. Tyschenko, I. E.; Volodin, V. A.; Rebohle, L.; Voelskov, M.; Skorupa, V. // Semiconductors;May99, Vol. 33 Issue 5, p523 

    The room-temperature photoluminescence emission and excitation spectra of Si[sub 3]N[sub 4] films implanted with Ge[sup +] and Ar[sup +] ions were investigated as a function of the ion dose and temperature of subsequent annealing. It was established that the implantation of bond-forming Ge atoms...

  • Control of internal stress and Young’s modulus of Si3N4 and polycrystalline silicon thin films using the ion implantation technique. Tabata, Osamu; Sugiyama, Susumu; Takigawa, Mitsuharu // Applied Physics Letters;4/2/1990, Vol. 56 Issue 14, p1314 

    Boron and phosphorus ions are implanted in order to control the internal stress and Young’s modulus of 200-nm-thick silicon nitride and polycrystalline silicon films prepared by low-pressure chemical vapor deposition. These ions are implanted into the middle layer of the films at doses of...

  • Spatial charge distribution in the plasma-enhanced chemical vapor deposited nitrogen-rich silicon nitride. Kanicki, J.; Hug, S. // Applied Physics Letters;2/20/1989, Vol. 54 Issue 8, p733 

    Gate quality N-rich silicon nitride films, with low bulk dangling bond densities, have been prepared by plasma-enhanced chemical vapor deposition at a substrate temperature of 400 °C. Films of different thicknesses, ranging from 200 to 10 500 Å, were obtained by varying the deposition...

  • Diffusion of hydrogen in low-pressure chemical vapor deposited silicon nitride films. Bik, W. M. Arnold; Linssen, R. N. H.; Habraken, F. H. P. M.; van der Weg, W. F.; Kuiper, A. E. T. // Applied Physics Letters;6/18/1990, Vol. 56 Issue 25, p2530 

    Hydrogen transport in low-pressure chemical vapor deposited Si3N4 has been investigated using samples consisting of a double layer of hydrogenated and deuterated nitride films. Concentration depth profiles of hydrogen and deuterium were measured using elastic recoil detection. Diffusion...

  • Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time. Knoops, Harm C. M.; de Peuter, K.; Kessels, W. M. M. // Applied Physics Letters;7/6/2015, Vol. 107 Issue 1, p1 

    The requirements on the material properties and growth control of silicon nitride (SiNx) spacer films in transistors are becoming ever more stringent as scaling of transistor structures continues. One method to deposit high-quality films with excellent control is atomic layer deposition (ALD)....

  • Single step process for epitaxial lateral overgrowth of GaN on SiC and sapphire substrates. Smart, J. A.; Chumbes, E. M. // Applied Physics Letters;12/13/1999, Vol. 75 Issue 24, p3820 

    Develops a process which produces epitaxial lateral overgrowth of gallium nitride-base materials directly on silicon chloride and sapphire substrates patterned with silicon nitride. Use of a high temperature aluminum gallium nitride nucleation layer; Elimination of the need for regrowth; Smooth...

  • Strain in epitaxial CoSi2 films on Si (111) and inference for pseudomorphic growth. Bai, Gang; Nicolet, Marc-A.; Vreeland, Thad; Ye, Q.; Wang, K. L. // Applied Physics Letters;10/30/1989, Vol. 55 Issue 18, p1874 

    The perpendicular x-ray strain of epitaxial CoSi2 films grown on Si(111) substrates at ∼600 °C was measured at temperatures from 24 up to 650 °C. At 600 °C, the perpendicular x-ray strain is -0.86%, which is about the x-ray strain that a stress-free CoSi2 film on Si(111) would have...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics