Wide-gap boron-doped microcrystalline silicon nitride

Hasegawa, S.; Segawa, M.; Kurata, Y.
November 1986
Applied Physics Letters;11/3/1986, Vol. 49 Issue 18, p1178
Academic Journal
Microcrystalline SiNx:H films were prepared by rf glow discharge of SiH4-B2H6-N2-H2 mixtures with the gas volume ratio of B2H6/SiH4=4.5×10-3. The volume fraction of the crystalline phase and the crystallite size decrease with an increase in N content x, and the films were amorphous at x above 0.2. The dark conductivity σd decreases and the optical gap Eg increases with x. The gap-state density is lowest at x near 0.2, where σd∼10-2–10-3/Ω cm (the activation energy is 0.1 eV) and Eg∼1.9 eV. These electrical properties are improved as compared with those for B-doped amorphous SiNx:H.


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