TITLE

Observation of a quasi-two-dimensional electron gas at an InSb/CdTe interface

AUTHOR(S)
Zheng, Y-D.; Chang, Y. H.; McCombe, B. D.; Farrow, R. F. C.; Temofonte, T.; Shirland, F. A.
PUB. DATE
November 1986
SOURCE
Applied Physics Letters;11/3/1986, Vol. 49 Issue 18, p1187
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Liquid-helium temperature transport and magnetotransport measurements on n-CdTe grown by molecular beam epitaxy on p-InSb substrates have demonstrated the presence of a quasi-two-dimensional electron gas in the InSb at the InSb/CdTe interface. The electron density and mobility in the channel can be varied by back gating.
ACCESSION #
9821253

 

Related Articles

  • Two-dimensional electron gases induced by polarization charges in AlN/GaN heterostructure grown by plasma-assisted molecular-beam epitaxy. Jeganathan, K.; Ide, T.; Shimizu, M.; Okumura, H. // Journal of Applied Physics;9/1/2003, Vol. 94 Issue 5, p3260 

    We discuss the growth and transport properties of two-dimensional electron gas confined at the AlN/GaN heterointerface grown by plasma-assisted molecular-beam epitaxy. The sheet carrier density was found to be highly dependent on the barrier thickness of AlN grown on a doped or undoped GaN...

  • Effect of the dislocation density on minority-carrier lifetime in molecular beam epitaxial HgCdTe. Shin, S.H.; Arias, J.M.; Zandian, M.; Pasko, J.G.; DeWames, R.E. // Applied Physics Letters;11/18/1991, Vol. 59 Issue 21, p2718 

    Measures the photoconductive minority-carrier lifetime as a function of temperature and etch-pit density in epitaxial mercury cadmium telluride. Use of molecular beam epitaxy; Determination of limiting recombination mechanisms; Correlation between carrier lifetime and dislocation density.

  • Ultra-high-finesse IV-VI microcavities for the midinfrared. Schwarzl, T.; Heiss, W.; Springholz, G. // Applied Physics Letters;8/30/1999, Vol. 75 Issue 9, p1246 

    Presents a study that grew IV-VI semiconductor-based midinfrared microcavities with very high-quality factors using molecular-beam epitaxy. Resonance and full-width features exhibited by the transmission spectra of the microcavities; Optical length of the lead telluride resonator layer between...

  • N-polar GaN/AlGaN/GaN high electron mobility transistors. Rajan, Siddharth; Chini, Alessandro; Wong, Man Hoi; Speck, James S.; Mishra, Umesh K. // Journal of Applied Physics;8/15/2007, Vol. 102 Issue 4, p044501 

    We describe the development of N-polar GaN-based high electron mobility transistors grown by N2 plasma-assisted molecular beam epitaxy on C-face SiC substrates. High mobility AlGaN/GaN modulation-doped two-dimensional electron gas channels were grown, and transistors with excellent dc and...

  • Bismuth- and thallium-doped lead telluride grown by molecular-beam epitaxy. Partin, D. L.; Thrush, C. M.; Simko, S. J.; Gaarenstroom, S. W. // Journal of Applied Physics;12/15/1989, Vol. 66 Issue 12, p6115 

    Presents study which examined bismuth- and thallium-doped lead telluride grown by molecular-beam epitaxy. Sample preparation; Results of scanning Auger electron spectroscopy; Results of ion mass spectroscopy.

  • Structure of CdTe-Cd1-xMnxTe multiple quantum wells grown on (001) InSb substrates by molecular beam epitaxy. Williams, G. M.; Cullis, A. G.; Whitehouse, C. R.; Ashenford, D. E.; Lunn, B. // Applied Physics Letters;9/25/1989, Vol. 55 Issue 13, p1303 

    Molecular beam epitaxy has been used to prepare multiple quantum well structures of CdTe/Cd1-xMnxTe on (001) InSb substrates. The growth of such a system on InSb allows the use of particularly low growth temperatures, hence minimizing interdiffusion effects. This study presents the first...

  • MBE-Grown ZnTe/Si, a Low-Cost Composite Substrate. Chen, Yuanping; Simingalam, Sina; Brill, Gregory; Wijewarnasuriya, Priyalal; Dhar, Nibir; Kim, Jae; Smith, David // Journal of Electronic Materials;Oct2012, Vol. 41 Issue 10, p2917 

    Growth of ZnTe on Si using molecular beam epitaxy (MBE) has been pursued as a new approach for a lattice-matched, large-area, low-cost alternate substrate for both II-VI and III-V compound semiconductors with lattice constants very near 6.1 Ã…, such as HgCdSe and GaSb-based type II...

  • Double-crystal x-ray topographic studies of bulk and epitaxially grown ZnxCd1-xTe (0.0≤x≤0.06). Qadri, Syed B.; Fatemi, M.; Dinan, J. H. // Applied Physics Letters;1/20/1986, Vol. 48 Issue 3, p239 

    The first double-crystal topographic studies of epitaxial layers of ZnxCd1-xTe (0≤x≤0.06) grown by molecular beam epitaxy are reported in this letter. A comparison of bulk and epitaxially grown ZnCdTe clearly indicates that the epitaxial layers are of better structural quality and...

  • Effect of structural parameters on transport characteristics of GalnAs/AllnAs two-dimensional... Tischler, M.A.; Parker, B.D. // Applied Physics Letters;4/15/1991, Vol. 58 Issue 15, p1614 

    Studies the effect of structural parameters on transport characteristics of GalnAs/AllnAs two-dimensional electron gases grown by molecular beam epitaxy. Sheet concentration and mobility as a function of buffer layer thickness and structure; Influence of spacer and buffer thickness on the...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics