Improved recombination lifetime of photoexcited carriers in GaAs single quantum well heterostructures confined by GaAs/AlAs short-period superlattices

Fujiwara, K.; Nakamura, A.; Tokuda, Y.; Nakayama, T.; Hirai, M.
November 1986
Applied Physics Letters;11/3/1986, Vol. 49 Issue 18, p1193
Academic Journal
Photoluminescence (PL) decay time measurements at 77 and 300 K are reported from 6.1 nm GaAs single quantum well heterostructures (SQWH’s) confined by GaAs/AlAs short-period superlattices (SPS’s) or ternary AlGaAs alloys with similar Al content, prepared by molecular beam epitaxy. The SQW PL intensity exhibits a single exponential decay with a time constant of 1.6 ns for SQWH’s confined by SPS’s and 0.3 ns for SQWH’s confined by AlGaAs alloys at 77 K. From comparison of the decay rates in both types of the sample, it is found that the radiative recombination efficiency is improved by a factor of about 6 in SPS confined SQWH’s. This higher efficiency is attributed to the improved heterointerfaces in addition to the enhanced radiative recombination rate due to the increased overlap of electron and hole wave functions in the narrow SQW.


Related Articles

  • Reduction in interfacial recombination velocity by superlattice buffer layers in GaAs/AlGaAs quantum well structures. Iwata, H.; Yokoyama, H.; Sugimoto, M.; Hamao, N.; Onabe, K. // Applied Physics Letters;6/12/1989, Vol. 54 Issue 24, p2427 

    The values of interfacial recombination velocities in GaAs/AlGaAs double heterostructures and quantum wells grown by molecular beam epitaxy with and without superlattice cladding layers are obtained with photoluminescence time-decay measurements. The authors show that superlattice layers reduce...

  • The identification of dark-line defects in AlGaAs/InGaAs/GaAs heterostructures. Fitzgerald, E. A.; Ashizawa, Y.; Eastman, L. F.; Ast, D. G. // Journal of Applied Physics;5/15/1988, Vol. 63 Issue 10, p4925 

    Focuses on a study which investigated the correlation between the structure of and the nonradiative recombination at defects in AlGaAs/InGaAs/GaAs heterostructures. Experimental method for detecting the critical layer thickness in the InGaAs/GaAs system; Results; Conclusion.

  • Recombination processes in quantum well lasers with superlattice barriers. Blood, P.; Fletcher, E. D.; Foxon, C. T.; Griffiths, K. // Applied Physics Letters;12/4/1989, Vol. 55 Issue 23, p2380 

    Spontaneous emission spectra from GaAs quantum well lasers grown by molecular beam epitaxy show that the radiative recombination rate in (AlAs)(GaAs) superlattice barriers is greater than in alloy barriers of the same average composition (x=0.25) due to reduction in effective gap by superlattice...

  • Native-oxide masked impurity-induced layer disordering of Al[sub x]Ga[sub 1-x]As quantum well... Dallesasse, J.M.; Holonyak, N.; El-Zein, N.; Richard, T.A.; Kish, F.A.; Sugg, A.R.; Burnham, R.D.; Smith, S.C. // Applied Physics Letters;3/4/1991, Vol. 58 Issue 9, p974 

    Shows that the native oxide that can be formed on high aluminum composition Al[sub x]Ga[1-x]As confining layers on superlattices or quantum well heterostructures serves as an effective mass against impurity diffusion, and thus against impurity-induced layer disordering. Water vapor oxidation in...

  • Implantation disordering of AlxGa1-xAs superlattices. Gavrilovic, P.; Deppe, D. G.; Meehan, K.; Holonyak, N.; Coleman, J. J.; Burnham, R. D. // Applied Physics Letters;7/15/1985, Vol. 47 Issue 2, p130 

    Data are presented showing that layer disordering of Al[sub x] Gap[sub 1-x] As-GaAs quantum well heterostructures (QWH's) or superlattices (SL's) via ion implantation can be effected with a lattice constituent (Al), an inert ion (Kr), or an active impurity (Zn, Si, S, etc.). A doping impurity...

  • Time-resolved carrier recombination dynamics of 1.3–1.8 μm broadband light emitting diode structures. Wang, Li; Lin, Shawn-Yu; Hafich, M. J.; Fritz, I. J. // Journal of Applied Physics;12/15/1996, Vol. 80 Issue 12, p6965 

    Presents a study which dealt with a time-resolved investigation of carrier recombination dynamics of broadband light emitting diode structures comprised of indium gallium arsenide and indium gallium aluminum arsenide superlattices. Methodology for the fabrication of superlattices; Experimental...

  • Heterointerface quality of lnGaP--GaAs superlattices determined by photopumping, x-ray analysis... Yang, Q.; Kellogg, D.A.; Lin, C.; Stillman, G.E.; Holonyak Jr., N. // Applied Physics Letters;8/23/1999, Vol. 75 Issue 8, p1101 

    Studies the room-temperature, photopumped, continuous laser operation of multiple-well InGaP-GaAs quantum-well heterostructures and superlattices grown by low-pressure metalorganic chemical vapor deposition. Material quality and nonradiative recombination at the heterointerfaces; Lasing...

  • Theoretical study of thresholdless Auger recombination in compressively strained InAlAsSb/GaSb.... Andreev, Aleksey D.; Zegrya, Georgy G. // Applied Physics Letters;2/3/1997, Vol. 70 Issue 5, p601 

    Investigates theoretically the thresholdless Auger recombination (AR) in strained quantum wells based on indium aluminum arsenic antimony/gallium antimony structure. Analysis of overlap integrals between the initial and final states of carrier; Effect of strain on electron-hole overlap...

  • Influence of separate confinement heterostructures on the effective carrier recombination.... Yamamoto, Tsuyoshi; Odagawa, Tetsufumi // Applied Physics Letters;9/15/1997, Vol. 71 Issue 11, p1543 

    Analyzes the carrier recombination coefficient of quantum well laser structures. Parameter of semiconductor lasers; Combination of two-level ambipolar rate equations and a carrier diffusion equation; Factors determining the recombination coefficient.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics