In situ x-ray topographic observation of dislocation behavior in In-doped GaAs crystals

Tohno, S.; Shinoyama, S.; Katsui, A.; Takaoka, H.
November 1986
Applied Physics Letters;11/3/1986, Vol. 49 Issue 18, p1204
Academic Journal
This letter describes the results of in situ observations of dislocation behavior in In-doped GaAs crystals at high temperatures using synchrotron radiation topography and high-temperature stressing apparatus. The generation and propagation processes of dislocations in a preyield stage have been investigated by making a comparison with undoped crystals. We find that there is a one-directional predominance in the generation and propagation of dislocations in In-doped crystals.


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