Photoluminescence study of the shallow donor neutralization in GaAs(Si) by atomic hydrogen

Weber, Jörg; Pearton, S. J.; Dautremont-Smith, W. C.
November 1986
Applied Physics Letters;11/3/1986, Vol. 49 Issue 18, p1181
Academic Journal
Atomic hydrogen in silicon-implanted GaAs samples is studied by photoluminescence. The near-band-gap luminescence of GaAs samples subjected to a hydrogen plasma reveals the neutralization effect of the shallow donors. The photoluminescence intensity increases after hydrogen plasma treatment. However, the donor-related luminescence is drastically reduced, indicating a smaller shallow donor concentration. After a thermal anneal (400 °C, 15 min), the original intensities of donor-related lines are restored. We confirm the model of an electrically inactive hydrogen-donor complex and rule out compensating defects created by the plasma treatment.


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