Ordering of oxide precipitates in oxygen implanted silicon

van Ommen, A. H.; Koek, B. H.; Viegers, M. P. A.
October 1986
Applied Physics Letters;10/27/1986, Vol. 49 Issue 17, p1062
Academic Journal
An order network of oxide precipitates has been found in the monocrystalline superficial silicon layer of a silicon-on-insulator structure obtained by high-dose oxygen implantation. The network consists of oxide precipitates 2 nm in size spaced about 5 nm apart. Electron diffraction patterns indicate that ordering occurs both parallel and perpendicular to the surface along the <100> directions of the silicon lattice. The precipitate network has a cubic symmetry.


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