TITLE

Ordering of oxide precipitates in oxygen implanted silicon

AUTHOR(S)
van Ommen, A. H.; Koek, B. H.; Viegers, M. P. A.
PUB. DATE
October 1986
SOURCE
Applied Physics Letters;10/27/1986, Vol. 49 Issue 17, p1062
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
An order network of oxide precipitates has been found in the monocrystalline superficial silicon layer of a silicon-on-insulator structure obtained by high-dose oxygen implantation. The network consists of oxide precipitates 2 nm in size spaced about 5 nm apart. Electron diffraction patterns indicate that ordering occurs both parallel and perpendicular to the surface along the <100> directions of the silicon lattice. The precipitate network has a cubic symmetry.
ACCESSION #
9821213

 

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