X-ray study of misfit strain relaxation in lattice-mismatched heterojunctions

Kamigaki, K.; Sakashita, H.; Kato, H.; Nakayama, M.; Sano, N.; Terauchi, H.
October 1986
Applied Physics Letters;10/27/1986, Vol. 49 Issue 17, p1071
Academic Journal
High-resolution x-ray diffraction measurements have been carried out in AlxGa1-xAs and InxGa1-xAs grown by the molecular beam epitaxy method on (001) GaAs substrates. The thin epitaxial layers in these lattice-mismatched semiconductor single heterojunctions are uniformly distorted and there is an elastic limit for large x. The epitaxial layer is affected by a thick substrate even over the elastic limit, i.e., the epitaxial layer still shows a strained state beyond the elastic limit. The relationship between the misfit strain and the lattice distortion is discussed.


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