Ohmic contact control in modulation-doped gallium arsenide field-effect transistors

Christou, A.; Efthimiopoulos, T.; Hatsopoulos, Z.
October 1986
Applied Physics Letters;10/27/1986, Vol. 49 Issue 17, p1077
Academic Journal
Modulation-doped field-effect transistor structures grown by molecular beam epitaxy were excimer laser annealed at a wavelength of 248 nm and energy density of 75–160 mJ/cm2. A transconductance of over 100 mS/mm was obtained. Source resistance was minimized at 0.8–1.0 Ω mm. The energy density threshold for interdiffusion is 90 mJ/cm2.


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