Semiconducting/semi-insulating reversibility in bulk GaAs

Look, D. C.; Yu, P. W.; Theis, W. M.; Ford, W.; Mathur, G.; Sizelove, J. R.; Lee, D. H.; Li, S. S.
October 1986
Applied Physics Letters;10/27/1986, Vol. 49 Issue 17, p1083
Academic Journal
Bulk, liquid-encapsulated Czochralski GaAs may be reversibly changed from semiconducting (ρ∼1 Ω cm) to semi-insulating (ρ∼107 Ω cm) by slow or fast cooling, respectively, following a 5 h, 950 °C soak in an evacuated quartz ampoule. This effect has been studied by temperature-dependent Hall-effect, photoluminescence, infrared absorption, mass spectroscopy, and deep level transient spectroscopy measurements. Except for boron, the samples are very pure, with carbon and silicon concentrations less than 3×1014 cm-3. Donor and acceptor concentrations, on the other hand, are in the mid 1015 cm-3 range, which means that the compensation is primarily determined by native defects, not impurities. A tentative model includes a donor at EC-0.13 eV, attributed to VAs-AsGa, and an acceptor at EV+0.07 eV, attributed to VGa-GaAs.


Related Articles

  • Transparent conducting thin films of GaInO[sub 3]. Phillips, Julia M.; Kwo, J. // Applied Physics Letters;7/4/1994, Vol. 65 Issue 1, p115 

    Identifies GaInO[sup 3] as a transparent conducting material which is structurally and chemically distinct from indium tin oxide. Influence of annealing on conductivity; Appearance of doping due to oxygen vacancies and aliovalent ion substitution; Implications for the improvement of film...

  • Enhanced recombination tunneling in GaAs pn junctions containing low-temperature-grown-GaAs and ErAs layers. Pohl, P.; Renner, F.H.; Eckardt, M.; Schwanhäußer, A.; Friedrich, A.; Yüksekdag, Ö.; Malzer, S.; Döhler, G.H.; Kiesel, P.; Driscoll, D.; Hanson, M.; Gossard, A.C. // Applied Physics Letters;11/10/2003, Vol. 83 Issue 19, p4035 

    We report electrical conductivity studies of highly-doped GaAs pn diodes containing a strongly n-doped low-temperature-grown (LT)–GaAs layer and pn junctions containing an approximately one monolayer thick ErAs layer. At room temperature, current densities of 1 kA/cm[sup 2] for the...

  • Nonlinearity of Acoustic Effects and High-Frequency Electrical Conductivity in GaAs/AlGaAs Heterostructures under Conditions of the Integer Quantum Hall Effect. Drichko, I. L.; D�yakonov, A. M.; Smirnov, I. Yu.; Toropov, A. I. // Semiconductors;Apr2000, Vol. 34 Issue 4, p422 

    The absorption coefficient for surface acoustic wave F and variation in the wave velocity ?V/V were measured in GaAs/AlGaAs heterostructures; the above quantities are related to interaction of the wave with two-dimensional electron gas and depend nonlinearly on the power of the wave....

  • Conductance statistics of small-area ohmic contacts on GaAs. Blanc, N.; Guéret, P.; Buchmann, P.; Dätwyler, K.; Vettiger, P. // Applied Physics Letters;5/28/1990, Vol. 56 Issue 22, p2216 

    The conductance distributions of very small-area alloyed ohmic contacts on n+-GaAs have been studied as a function of lateral contact size d, with d ranging from 4 μm down to 0.3 μm. The data are fairly well represented by a Poisson distribution, which takes into account the granularity of...

  • Characteristics of Nuclear Radiation Detectors Based on Semi-Insulating Gallium Arsenide. Verbitskaya, E. M.; Eremin, V. K.; Ivanov, A. M.; Strokan, N. B.; Vasil'ev, V. I.; Gavrin, V. N.; Veretenkin, E. P.; Kozlova, Yu. P.; Kulikov, V. B.; Markov, A. V.; Polyakov, A. Ya. // Semiconductors;Apr2004, Vol. 38 Issue 4, p472 

    The characteristics of detectors based on bulk semi-insulating GaAs (SI-GaAs) have been studied by a particle detection and spectrometry. A distinctive feature of these detectors is the dependence of the width of the space charge region W on reverse bias voltage U. The rate of increase in W(U)...

  • Persistent IR photoconductivity in InAs/GaAs structures with QD layers. Kul'bachinskiĭ, V. A.; Rogozin, V. A.; Kytin, V. G.; Lunin, R. A.; Zvonkov, B. N.; Dashevsky, Z. M.; Casian, V. A. // Semiconductors;Feb2006, Vol. 40 Issue 2, p210 

    Persistent IR photoconductivity in InAs/GaAs structures with layers of QDs with a p-and n-type conductivity was studied. At the initial stage, after the illumination is switched off, the relaxation of photoconductivity follows a logarithmic law. The relaxation time depends on temperature; it...

  • Photopiezoelectric induction of resonant acoustic waves in semi-insulating gallium arsenide single crystals. Mitrokhin, V.; Rembeza, S.; Antonov, R. // Semiconductors;Dec2011, Vol. 45 Issue 12, p1550 

    The effect of resonant acoustic wave excitation in semi-insulating gallium-arsenide single crystals is investigated by means of light pulses. The peak amplitude of excited elastic oscillations is observed in a temperature range, where small values of the internal friction and electrical...

  • Corrections to the Drude conductivity and Hall resistivity caused by electron interaction and ‘memory’ effects in the presence of mixed disorder. Galaktionov, E. A.; Savchenko, A. K.; Ritchie, D. A. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p593 

    In this work we have studied the corrections to the Drude conductivity and Hall constant of a high-mobility 2D electron gas in a GaAs/AlGaAs heterostructure caused by the electron-electron interaction in the presence of mixed disorder. A temperature-dependent, parabolic, negative...

  • Metal-Insulator Transition in GaAs/AlGaAs Heterostructures: Acoustic Study. Drichko, I. L.; Dyakonov, A. M.; Smirnov, I. Yu.; Toropov, A. I. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p545 

    The interaction of surface acoustic waves (SAW) with the Si “underdoped” n-GaAs/AlGaAs heterostructure with high photosensitivity has been studied. In the unexposed state, the 2D channel conductivity at T=4.2 K was less than 10-8 Ohm-1. Under the exposure of the LED light it was...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics