TITLE

Semiconducting/semi-insulating reversibility in bulk GaAs

AUTHOR(S)
Look, D. C.; Yu, P. W.; Theis, W. M.; Ford, W.; Mathur, G.; Sizelove, J. R.; Lee, D. H.; Li, S. S.
PUB. DATE
October 1986
SOURCE
Applied Physics Letters;10/27/1986, Vol. 49 Issue 17, p1083
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Bulk, liquid-encapsulated Czochralski GaAs may be reversibly changed from semiconducting (ρ∼1 Ω cm) to semi-insulating (ρ∼107 Ω cm) by slow or fast cooling, respectively, following a 5 h, 950 °C soak in an evacuated quartz ampoule. This effect has been studied by temperature-dependent Hall-effect, photoluminescence, infrared absorption, mass spectroscopy, and deep level transient spectroscopy measurements. Except for boron, the samples are very pure, with carbon and silicon concentrations less than 3×1014 cm-3. Donor and acceptor concentrations, on the other hand, are in the mid 1015 cm-3 range, which means that the compensation is primarily determined by native defects, not impurities. A tentative model includes a donor at EC-0.13 eV, attributed to VAs-AsGa, and an acceptor at EV+0.07 eV, attributed to VGa-GaAs.
ACCESSION #
9821197

 

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