Dangling bond electron spin-lattice relaxation in rf-sputtered hydrogenated amorphous silicon and silicon carbide

Dey, S.; Torgeson, D. R.; Barnes, R. G.
October 1986
Applied Physics Letters;10/27/1986, Vol. 49 Issue 17, p1092
Academic Journal
Electron spin resonance methods have been used to measure the temperature dependence of the spin-lattice relaxation time T1 of dangling bond electrons in hydrogenated amorphous silicon and silicon carbide samples prepared by radio frequency sputtering. The T1 measurements were made by a combination of continuous-wave absorption mode saturation and periodic adiabatic passage methods over the temperature range 100–400 K, yielding T-11∝T2 behavior consistent with relaxation by two-level systems.


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