High gain InGaAs/InP heterostructure bipolar transistors grown by gas source molecular beam epitaxy

Nottenburg, R. N.; Temkin, H.; Panish, M. B.; Hamm, R. A.
October 1986
Applied Physics Letters;10/27/1986, Vol. 49 Issue 17, p1112
Academic Journal
The capability for high quality heterostructure bipolar transistors with structures in the InGaAs/InP system has been demonstrated by gas source molecular beam epitaxy. These devices are characterized by high current gain, β∼1100, only weakly dependent on the collector current. The current-voltage characteristics of the emitter base junction exhibit an ideality factor n=1.2 over a wide bias range.


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