Epitaxial growth of β-SiC thin films on 6H α-SiC substrates via chemical vapor deposition

Kong, H. S.; Glass, J. T.; Davis, R. F.
October 1986
Applied Physics Letters;10/27/1986, Vol. 49 Issue 17, p1074
Academic Journal
Epitaxial films of cubic β-SiC(111) have been grown via chemical vapor deposition at 1683 K on (0001) substrates of hexagonal 6H α-SiC. Optical microscopy of the surface indicated that a decrease in the ratio of the sum of the C and Si source gases to the H2 carrier gas changed the crystallization behavior from polycrystalline to monocrystalline. Cross-sectional transmission electron microscopy showed almost no line or planar defects at the substrate/film interface and very few defects within the bulk of the film.


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