TITLE

Epitaxial growth of β-SiC thin films on 6H α-SiC substrates via chemical vapor deposition

AUTHOR(S)
Kong, H. S.; Glass, J. T.; Davis, R. F.
PUB. DATE
October 1986
SOURCE
Applied Physics Letters;10/27/1986, Vol. 49 Issue 17, p1074
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Epitaxial films of cubic β-SiC(111) have been grown via chemical vapor deposition at 1683 K on (0001) substrates of hexagonal 6H α-SiC. Optical microscopy of the surface indicated that a decrease in the ratio of the sum of the C and Si source gases to the H2 carrier gas changed the crystallization behavior from polycrystalline to monocrystalline. Cross-sectional transmission electron microscopy showed almost no line or planar defects at the substrate/film interface and very few defects within the bulk of the film.
ACCESSION #
9821163

 

Related Articles

  • Controlled growth of 3C-SiC and 6H-SiC films on low-tilt-angle vicinal (0001) 6H-SiC wafers. Powell, J.A.; Petit, J.B.; Edgar, J.H.; Jenkins, I.G.; Matus, L.G.; Yang, J.W.; Pirouz, P.; Choyke, W.J.; Clemen, L.; Yoganathan, M. // Applied Physics Letters;7/15/1991, Vol. 59 Issue 3, p333 

    Examines the growth of 6H-silicon carbide (SiC) single-crystal films by chemical vapor deposition. Treatment of pregrowth surface; Development of SiC semiconductor technology; Control of SiC polytype in the epitaxial film growth process.

  • Single-crystalline, epitaxial cubic SiC films grown on (100) Si at 750 degrees C by chemical.... Golecki, I.; Reidinger, F. // Applied Physics Letters;4/6/1992, Vol. 60 Issue 14, p1703 

    Investigates the single-crystalline, epitaxial cubic silicon carbide films grown on (100) silicon by chemical vapor deposition. Observation on the epitaxial growth temperature; Exclusion of surface carbonization step and halogenated compounds in the study; Comparison to the crystalline quality...

  • Comparative Studies of Carrier Dynamics in 3C-SiC Layers Grown on Si and 4H-SiC Substrates. Ščajev, Patrik; Hassan, Jawad; Jarašiūnas, Kęstutis; Kato, Masashi; Henry, Anne; Bergman, J. // Journal of Electronic Materials;Apr2011, Vol. 40 Issue 4, p394 

    Time-resolved nonlinear optical techniques were applied to determine the electronic parameters of cubic silicon carbide layers. Carrier lifetime, τ, and mobility, μ, were measured in a free-standing wafer grown on undulant Si and an epitaxial layer grown by hot-wall chemical vapor...

  • Morphology of heteroepitaxial β-SiC films grown on Si(111) through high-vacuum chemical vapor deposition from hexane vapors. Orlov, L.; Drozdov, Yu.; Shevtsov, V.; Bozhenkin, V.; Vdovin, V. // Physics of the Solid State;Apr2007, Vol. 49 Issue 4, p627 

    The characteristics of cubic silicon carbide films grown on silicon through high-vacuum chemical vapor deposition (HVCVD) from hexane vapors are investigated using scanning probe microscopy and x-ray diffraction. The surface morphology and structure of the films are analyzed as a function of the...

  • Epitaxial growth of beta-SiC on silicon-on-sapphire substrates by chemical vapor deposition. Pazik, J.C.; Kelner, G.; Bottka, N. // Applied Physics Letters;4/1/1991, Vol. 58 Issue 13, p1419 

    Studies the epitaxial growth of cubic silicon carbide (Beta-SiC) on silicon-on-sapphire substrates by chemical vapor deposition. Carbonization of the silicon surface prior to growth of the Beta-SiC epilayer; Characterization of the thin films by infrared reflectance spectroscopy, optical and...

  • Effect of SiH[sub 4]/CH[sub 4] flow ratio on the growth of beta-SiC on Si by electron cyclotron.... Chih-Chien Liu; Chiapyng Lee // Applied Physics Letters;1/9/1995, Vol. 66 Issue 2, p168 

    Investigates the effect of SiH[sub 4]/CH[sub 4] flow ratio on the growth of beta-silicon carbide on silicon substrates. Use of electron cyclotron resonance chemical vapor deposition; Dependence of crystalline structure and chemical composition to flow ratio; Production of lower, stoichiometric...

  • ICP Etching of RF Sputtered and PECVD Silicon Carbide Films. Shi, J.; Chor, E. F.; Choi, W. K. // International Journal of Modern Physics B: Condensed Matter Phys;3/20/2002, Vol. 16 Issue 6/7, p1067 

    In this paper, we report the Inductive Coupled Plasma (ICP) etching of RF sputtered unhydrogenated amorphous silicon carbide film (a-Si[sub 0.5]C[sub 0.5]), and plasma enhanced chemical vapour deposited (PECVD) hydrogenated amorphous silicon carbide films (a-Si[sub 0.3]C[sub 0.7]:H and a-Si[sub...

  • Fabrication and properties of polycrystalline-SiC/Si structures for Si heterojunction devices. Chaudhry, M.I.; Wright, R.L. // Applied Physics Letters;7/1/1991, Vol. 59 Issue 1, p51 

    Examines the properties of polycrystalline silicon carbide/silicon (SiC) heterojunction diodes fabricated by chemical vapor deposition. Evidence for rectification with low leakage current; Process for increasing the quantum and conversion efficiency of the diodes; Comparison between the band...

  • Uniform beta-SiC thin film growth on Si by low pressure rapid thermal chemical vapor deposition. Steckl, A.J.; Li, J.P. // Applied Physics Letters;4/27/1992, Vol. 60 Issue 17, p2107 

    Investigates the uniform beta-silicon carbide thin film growth on silicon by low pressure rapid thermal chemical vapor deposition (LP-RTCVD). Value of the LP-RTCVD; Components of the growth process; Effect of pressure reduction on the growth rate; Factors responsible for the low standard...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics