TITLE

Characterization of individual electron traps in amorphous Si by telegraph noise spectroscopy

AUTHOR(S)
Rogers, C. T.; Buhrman, R. A.; Kroger, H.; Smith, L. N.
PUB. DATE
October 1986
SOURCE
Applied Physics Letters;10/27/1986, Vol. 49 Issue 17, p1107
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have used telegraph noise spectroscopy to study the properties of individual localized electron traps of a particular type in thin layers (t<∼6 nm) of rf sputtered amorphous Si and amorphous Si:H. The results indicate that these traps have bistable ionic configurations: The trapping kinetics are dominated by transitions between two different ionic configurations with an associated change in trapped charge. Above ∼20 K, configurational transitions are by thermally activated hopping; below 20 K, transitions appear to be induced by zero-point oscillations.
ACCESSION #
9821154

 

Related Articles

  • High-temperature annealing behavior of μτ products of electrons and holes in a-Si:H. Wang, F.; Schwarz, R. // Journal of Applied Physics;1/15/1992, Vol. 71 Issue 2, p791 

    Studies the mobility-lifetime products of electrons and holes in undoped hydrogenated amorphous silicon samples. Characteristics of hydrogenated amorphous silicon; Sample preparation and experimental procedures; Discussion on the results of the study.

  • Electron mobility in hydrogenated amorphous silicon under single and double injection. Silver, M.; Winborne, G.; Adler, D.; Cannella, V. // Applied Physics Letters;4/13/1987, Vol. 50 Issue 15, p983 

    A recent suggestion that the band mobility of electrons in hydrogenated amorphous silicon (a-Si:H) is larger under high-level double-injection than under single-injection conditions because of the neutralization of charged defect states in the former case is tested by studying the transit time...

  • Unique correlation of the Fermi energy with the metastable defect density in amorphous silicon. Bube, Richard H.; Benatar, Lisa; Redfield, David // Journal of Applied Physics;2/1/1994, Vol. 75 Issue 3, p1571 

    Presents a study which examined the correlation between the metastable defect density and the value and temperature dependence of the Fermi energy in undoped hydrogenated amorphous silicon. Experimental details; Results and discussion; Conclusion.

  • Longitudinal electron transport in hydrogenated amorphous silicon/silicon nitride multilayer structures. Hattori, R.; Shirafuji, J. // Applied Physics Letters;1/15/1990, Vol. 56 Issue 3, p259 

    Electron transport longitudinal to hydrogenated amorphous silicon/silicon nitride (a-Si:H/a-SiNx:H) multilayer structures (superlattices) with various barrier layer thicknesses has been measured by the time-of-flight method. The barrier thickness dependence of the electron drift velocity...

  • Silicon epitaxy grown by electron-beam evaporation in ultrahigh vacuum at 200 degrees C. Yung-Jen Lin; Tri-Rung Yew // Applied Physics Letters;9/21/1992, Vol. 61 Issue 12, p1396 

    Examines silicon epitaxial growth by electron-beam evaporation in ultrahigh vacuum system. Effects of thermal-desorption process on native oxide; Dependence of the epitaxial growth condition on growth rate; Formation of amorphous silicon by high growth rates.

  • Direct electron spin resonance determination of dangling bond energies in rf sputtered hydrogenated amorphous silicon. Jousse, D. // Applied Physics Letters;11/24/1986, Vol. 49 Issue 21, p1438 

    The energy positions within the gap of the dangling bond levels are deduced from the variations in intensity of the equilibrium electron spin resonance signal as a function of Fermi level positions in undoped and doped rf sputtered hydrogenated amorphous silicon (a-Si:H). The measurements of...

  • Experimental study and modeling of reverse-bias dark currents in PIN structures using amorphous and polymorphous silicon. Tchakarov, S.; i Cabarrocas, P. Roca; Dutta, U.; Chatterjee, P.; Equer, B. // Journal of Applied Physics;12/1/2003, Vol. 94 Issue 11, p7317 

    Polymorphous silicon (pm-Si:H) is a nanostructured silicon thin film, with a lower defect density of states and better electronic properties than standard amorphous silicon. We have studied the reverse-bias dark current in PIN structures using this material as the intrinsic layer and compared...

  • Quantum confinement in amorphous silicon layers. Allan, G.; Delerue, C. // Applied Physics Letters;9/1/1997, Vol. 71 Issue 9, p1189 

    Investigates the electronic structure of hydrogenated amorphous silicon layers. Prediction of an important blueshift caused by the confinement of layer thickness; Enhancement of the radiative recombination rate by disorder and confinement; Evidence of the size of defects and localized state...

  • Structural disorder induced in hydrogenated amorphous silicon by light soaking. Gibson, J. M.; Treacy, M. M. J.; Voyles, P. M.; Jin, H-C.; Abelson, J. R. // Applied Physics Letters;11/23/1998, Vol. 73 Issue 21 

    We show, using variable coherence transmission electron microscopy, that light soaking of amorphous hydrogenated silicon thin films leads to structural changes. We speculate that the structural changes are associated with instability in the as-deposited material. We suggest that improved...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics