Characterization of individual electron traps in amorphous Si by telegraph noise spectroscopy

Rogers, C. T.; Buhrman, R. A.; Kroger, H.; Smith, L. N.
October 1986
Applied Physics Letters;10/27/1986, Vol. 49 Issue 17, p1107
Academic Journal
We have used telegraph noise spectroscopy to study the properties of individual localized electron traps of a particular type in thin layers (t<∼6 nm) of rf sputtered amorphous Si and amorphous Si:H. The results indicate that these traps have bistable ionic configurations: The trapping kinetics are dominated by transitions between two different ionic configurations with an associated change in trapped charge. Above ∼20 K, configurational transitions are by thermally activated hopping; below 20 K, transitions appear to be induced by zero-point oscillations.


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