Room-temperature excitons in Ga0.47In0.53As-InP superlattices grown by low-pressure metalorganic chemical vapor deposition

Razeghi, M.; Nagle, J.; Maurel, P.; Omnes, F.; Pocholle, J. P.
October 1986
Applied Physics Letters;10/27/1986, Vol. 49 Issue 17, p1110
Academic Journal
Very high quality Ga0.47In0.53As-InP heterojunctions, quantum wells, and superlattices have been grown by low-pressure metalorganic chemical vapor deposition. Excitation spectroscopy shows evidence of strong and well-resolved exciton peaks in the luminescence and excitation spectra of GaInAs-InP quantum wells. Optical absorption spectra show room-temperature excitons in GaInAs-InP superlattices.


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