TITLE

Room-temperature excitons in Ga0.47In0.53As-InP superlattices grown by low-pressure metalorganic chemical vapor deposition

AUTHOR(S)
Razeghi, M.; Nagle, J.; Maurel, P.; Omnes, F.; Pocholle, J. P.
PUB. DATE
October 1986
SOURCE
Applied Physics Letters;10/27/1986, Vol. 49 Issue 17, p1110
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Very high quality Ga0.47In0.53As-InP heterojunctions, quantum wells, and superlattices have been grown by low-pressure metalorganic chemical vapor deposition. Excitation spectroscopy shows evidence of strong and well-resolved exciton peaks in the luminescence and excitation spectra of GaInAs-InP quantum wells. Optical absorption spectra show room-temperature excitons in GaInAs-InP superlattices.
ACCESSION #
9821152

 

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