Room-temperature operation of InGaAsSb/AlGaSb double heterostructure lasers near 2.2 μm prepared by molecular beam epitaxy

Chiu, T. H.; Tsang, W. T.; Ditzenberger, J. A.; van der Ziel, J. P.
October 1986
Applied Physics Letters;10/27/1986, Vol. 49 Issue 17, p1051
Academic Journal
In0.16Ga0.84As0.15Sb0.85/Al0.35Ga0.65Sb double heterostructure injection lasers have been grown by molecular beam epitaxy on (100) GaSb substrates. Room-temperature operation near 2.2 μm wavelength has been achieved under pulsed conditions. Low pulsed threshold current density of 4.2 kA/cm2 and a characteristic temperature of T0∼26 K have been obtained.


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