Short cavity GaAs/AlGaAs multiquantum well lasers by dry etching

Yuasa, Tonao; Yamada, Tomoyuki; Asakawa, Kiyoshi; Sugata, Sumio; Ishii, Makoto; Uchida, Mamoru
October 1986
Applied Physics Letters;10/20/1986, Vol. 49 Issue 16, p1007
Academic Journal
A reactive ion beam etching method with Cl2 plasma is applied to fabricate short cavity GaAs/AlGaAs multiquantum well lasers grown by molecular beam epitaxy. Threshold currents as low as 38 mA are achieved for the 20-μm-long cavity lasers. The very short cavity lasers show single longitudinal mode operation under pulsed conditions. Cavity length dependence of the threshold current is also investigated for the dry-etched lasers with cavity lengths varying from 20 to 500 μm.


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