TITLE

Short cavity GaAs/AlGaAs multiquantum well lasers by dry etching

AUTHOR(S)
Yuasa, Tonao; Yamada, Tomoyuki; Asakawa, Kiyoshi; Sugata, Sumio; Ishii, Makoto; Uchida, Mamoru
PUB. DATE
October 1986
SOURCE
Applied Physics Letters;10/20/1986, Vol. 49 Issue 16, p1007
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A reactive ion beam etching method with Cl2 plasma is applied to fabricate short cavity GaAs/AlGaAs multiquantum well lasers grown by molecular beam epitaxy. Threshold currents as low as 38 mA are achieved for the 20-μm-long cavity lasers. The very short cavity lasers show single longitudinal mode operation under pulsed conditions. Cavity length dependence of the threshold current is also investigated for the dry-etched lasers with cavity lengths varying from 20 to 500 μm.
ACCESSION #
9821141

 

Related Articles

  • High-speed modulation of strained-layer InGaAs-GaAs-AlGaAs ridge waveguide multiple quantum well... Offsey, S.D.; Lester, L.F.; Schaff, W.J.; Eastman, L.F. // Applied Physics Letters;5/27/1991, Vol. 58 Issue 21, p2336 

    Describes the growth of strained-layer indium gallium arsenide (InGaAs)-GaAs-aluminum GaAs multiple quantum well lasers by molecular beam epitaxy. Processing of the ridge waveguide structures; Threshold currents of the devices; Determination of the microwave modulation bandwidth.

  • Self-aligned InGaAs/GaAs/InGaP quantum well lasers prepared by gas-source molecular beam epitaxy.... Chen, Y.K.; Wu, M.C.; Kuo, J.M.; Chin, M.A.; Sergent, A.M. // Applied Physics Letters;12/2/1991, Vol. 59 Issue 23, p2929 

    Presents the fabrication of index-guided self-aligned InGaAs/GaAs/InGaP quantum well lasers by gas-source molecular beam epitaxy with two growth steps. Use of aluminum-free InGaP as cladding layers; Measurement of a room temperature continuous wave lasing threshold current.

  • Double-wavelength laser array with InGaAsP/InGaAsP multiple quantum well grown by Ar ion.... Yamada, T.; Iga, R. // Applied Physics Letters;11/16/1992, Vol. 61 Issue 20, p2449 

    Examines the laser diode array of InGaAsP/InGaAsP multiple quantum well (MQW) lasers grown by argon ion laser-assisted metalorganic molecular beam epitaxy. Irradiation of the separate confinement heterostructure MQW laser film; Operation of laser diode with an irradiated MQW active layer;...

  • Continuous wave operation on extremely low-temperature (375 degrees C)-grown AlGaAs.... Miyazawa, Sei-ichi; Sekiguchi, Yoshinobu; Okuda, Masahiro; Hasegawa, Mitsutoshi; Nojiri, Hidetoshi // Applied Physics Letters;2/8/1993, Vol. 62 Issue 6, p624 

    Describes the continuous wave operation of aluminum gallium arsenide single-quantum-well (SQW) lasers grown by molecular beam epitaxy. Differential quantum efficiency of the ridge-waveguide laser; Fabrication of the laser; Results of the preliminary life test on the SQW lasers.

  • GaAs/GaInAsP quantum well lasers grown by gas-source molecular beam epitaxy. Zhang, G.; Nappi, J. // Applied Physics Letters;2/21/1994, Vol. 64 Issue 8, p1009 

    Examines gallium arsenide/gallium indium arsenide phosphide quantum well lasers by gas-source molecular beam epitaxy. Components of aluminum-free laser structure; Details of the threshold current density; Production of continuous-wave light output power in ridge waveguide lasers.

  • Low-threshold 1.3-mum wavelength, InGaAsP strained-layer multiple quantum well lasers grown by.... Guang-Jye Shiau; Chih-Ping Chao // Applied Physics Letters;8/15/1994, Vol. 65 Issue 7, p892 

    Describes the growth of low-threshold 1.3-micrometer wavelength strained-layer indium gallium arsenic phosphide heterostructure quantum well lasers. Application of gas source molecular beam epitaxy; Value of the lowest threshold current density; Use of silicon-doped (100) indium phosphide...

  • Ultrahigh relaxation oscillation frequency (up to 30 GHz) of highly p-doped GaAs/GaAlAs multiple quantum well lasers. Uomi, K.; Mishima, T.; Chinone, N. // Applied Physics Letters;7/13/1987, Vol. 51 Issue 2, p78 

    We have demonstrated a relaxation oscillation frequency (fr) of up to 30 GHz in highly p-doped (Be=1×1019 cm-3) GaAs/GaAlAs multiple quantum well (MQW) lasers grown by molecular beam epitaxy. This is the highest fr achieved at room temperature for III-V semiconductor lasers. The high fr is...

  • Low-threshold operation of AlGaAs/GaAs multiple quantum well lasers grown on Si substrates by molecular beam epitaxy. Chong, Tow C.; Fonstad, Clifton G. // Applied Physics Letters;7/27/1987, Vol. 51 Issue 4, p221 

    We report the first AlGaAs-GaAs multiple quantum well (MQW) lasers fabricated on (001)Si substrates by molecular beam epitaxy (MBE) with relatively thin buffer layers. The lasers have broad-area (170×240 μm) pulsed threshold current density of 3.2 kA/cm2 at room temperature, the lowest...

  • Patterned quantum well semiconductor injection laser grown by molecular beam epitaxy. Kapon, E.; Harbison, J. P.; Yun, C. P.; Stoffel, N. G. // Applied Physics Letters;2/22/1988, Vol. 52 Issue 8, p607 

    A novel quantum well semiconductor laser structure is described. This patterned quantum well laser utilizes the thickness variations and nonplanarity exhibited by quantum wells grown on grooved substrates in order to achieve lateral carrier confinement and real index waveguiding. Index guided...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics