TITLE

New device to generate Si2H6 for amorphous silicon depositions

AUTHOR(S)
Dickson, C. R.
PUB. DATE
October 1986
SOURCE
Applied Physics Letters;10/20/1986, Vol. 49 Issue 16, p1022
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A new device is described for continuous conversion of pure silane into disilane in yields up to 40%. The device was used in line with an amorphous silicon deposition system to grow 1-μm-thick films at 300 °C. The minority-carrier diffusion length measured on one of these films was 0.3 μm at one sun illumination. The device can also be used with a synthesis station to collect large quantities of pure disilane. The absence of hydrocarbons, chlorosilanes, and siloxanes at the 10–100 ppm levels was established by analysis of a collected disilane sample.
ACCESSION #
9821133

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics