Determination of gap state density in polycrystalline silicon by field-effect conductance

Fortunato, G.; Migliorato, P.
October 1986
Applied Physics Letters;10/20/1986, Vol. 49 Issue 16, p1025
Academic Journal
We have obtained the density of states (DOS) in polycrystalline silicon from the analysis of the field-effect conductance. The DOS exhibits a U-shaped distribution with an exponential band tail. The method is very sensitive and accounts for the effect of film morphology and differences in device processing (e.g., post-hydrogenation).


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