Interpretation of quantum yields exceeding unity in photoelectrochemical systems

Szklarczyk, Marek; Allen, Roland E.
October 1986
Applied Physics Letters;10/20/1986, Vol. 49 Issue 16, p1028
Academic Journal
In photoelectrochemical systems involving light shining on a semiconductor interfaced with an electrolyte, the quantum yield as a function of photon frequency ν is observed to exhibit a peak at hν≊2Eg, where Eg is the band gap of the semiconductor. The maximum in this peak is sometimes found to exceed unity. We provide an interpretation involving surface states and inelastic electron-electron scattering. The theory indicates that the effect should be observable for p-type semiconductors, but not n-type.


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