TITLE

Surface stoichiometry and reaction kinetics of molecular beam epitaxially grown (001) CdTe surfaces

AUTHOR(S)
Benson, J. D.; Wagner, B. K.; Torabi, A.; Summers, C. J.
PUB. DATE
October 1986
SOURCE
Applied Physics Letters;10/20/1986, Vol. 49 Issue 16, p1034
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Reflection high-energy electron diffraction desorption studies have been performed on epitaxial (001) CdTe surfaces. Both Cd and Te desorption from CdTe were observed to follow a simple first order rate law. Activation energies of 1.95 and 7.70 eV were found for Te and Cd, respectively, on the CdTe surface. The congruent evaporation temperature was determined to be 340 °C. Under normal growth conditions (a substrate temperature of 300 °C and growth rate of 1 μm/h) a Te-stabilized surface of (001) CdTe was found. The implications of these findings on high-quality crystalline growth are discussed.
ACCESSION #
9821125

 

Related Articles

  • Molecular-Beam Epitaxy of Mercury–Cadmium–Telluride Solid Solutions on Alternative Substrates. Sidorov, Yu. G.; Dvoretskiı, S. A.; Varavin, V. S.; Mikhaılov, N. N.; Yakushev, M. V.; Sabinina, I. V. // Semiconductors;Sep2001, Vol. 35 Issue 9, p1045 

    Growth processes were considered for heteroepitaxial structures based on a mercury-cadmium-telluride (MCT) solid solution deposited on GaAs and Si alternative substrates by molecular-beam epitaxy. Physical and chemical processes of growth and defect-generation mechanisms were studied for CdZnTe...

  • Structure of nonrectangular HgCdTe superlattices grown by laser molecular beam epitaxy. Cheung, J. T.; Cirlin, E.-H.; Otsuka, N. // Applied Physics Letters;7/25/1988, Vol. 53 Issue 4, p310 

    Laser molecular beam epitaxy offers instantaneous and accurate composition and thickness control that was used successfully to grow HgCdTe-based superlattice structures with rectangular, trapezoidal, triangular, and sawtooth-shaped quantum wells. Their structures were characterized with...

  • Role of the crystallographic orientation on the incorporation of indium in HgCdTe epilayers grown by molecular beam epitaxy. Sou, I. K.; Wijewarnasuriya, P. S.; Boukerche, M.; Faurie, J. P. // Applied Physics Letters;9/4/1989, Vol. 55 Issue 10, p954 

    In-doped HgCdTe films have been grown by molecular beam epitaxy (MBE) on CdTe substrates in the (100) crystallographic orientation. They were characterized by Hall and secondary-ion mass spectroscopy measurements. The results are compared with those of In-doped HgCdTe layers grown in the (111)B...

  • Stimulated emission from a Hg1-xCdxTe epilayer grown by molecular beam epitaxy. Mahavadi, K. K.; Bleuse, J.; Chu, X.; Faurie, J. P. // Applied Physics Letters;9/25/1989, Vol. 55 Issue 13, p1285 

    We report on the observation of stimulated emission from a (100) oriented Hg1-xCdxTe epilayer grown by molecular beam epitaxy. The cleaved epilayers were cooled and optically pumped by a Nd:YAG laser and were found to lase continuously up to 40 K.

  • Molecular beam epitaxial growth of CdTe and HgCdTe on Si (100). Sporken, R.; Sivananthan, S.; Mahavadi, K. K.; Monfroy, G.; Boukerche, M.; Faurie, J. P. // Applied Physics Letters;10/30/1989, Vol. 55 Issue 18, p1879 

    CdTe has been grown on Si(100) by molecular beam epitaxy. Two orientations can be obtained: (111)B CdTe when the CdTe is deposited directly on the Si(100) substrates, and (100)CdTe when an intermediate layer of ZnTe is grown first. The (111)B oriented layers are made of two domains which are...

  • Linear polarized luminescence from CdTe epilayers. Kuhn, T. A.; Ossau, W.; Bicknell-Tassius, R. N.; Landwehr, G. // Applied Physics Letters;12/18/1989, Vol. 55 Issue 25, p2637 

    We report for the first time the observation of strongly linearly polarized luminescence from CdTe epitaxial layers grown by photoassisted molecular beam epitaxy. Strong linear polarization was detected in the acceptor-bound exciton spectral region and in the pair band regions (1.54–1.56...

  • Excited confined quantum states in CdMnTe-CdTe superlattices. Harper, R. L.; Bicknell, R. N.; Blanks, D. K.; Giles, N. C.; Schetzina, J. F.; Lee, Y. R.; Ramdas, A. K. // Journal of Applied Physics;1/15/1989, Vol. 65 Issue 2, p624 

    Reports on the association of the piezomodulated reflectivity spectra of CdMnTe-cadmium telluride (CdTe) superlattices grown by photoassisted molecular-beam epitaxy with excited confined quantum states. Optical transitions observed in the piezoreflectivity spectra from superlattices; Difference...

  • Long and middle wavelength infrared photodiodes fabricated with Hg1-x CdxTe grown by molecular-beam epitaxy. Arias, J. M.; Shin, S. H.; Pasko, J. G.; DeWames, R. E.; Gertner, E. R. // Journal of Applied Physics;2/15/1989, Vol. 65 Issue 4, p1747 

    Details the fabrication of middle wave-lengths infrared and long wavelength infrared photodiodes with molecular-beam epitaxy (MBE) mercury cadmium tellurides grown on the orientation of lattice-matched cadmium zinc telluride substrates. Material characteristics of MBE mercury cadmium...

  • Stimulated emission and gain measurements in molecular-beam epitaxially grown CdTe. Hays, J. M.; Song, J. J.; Wu, O. K. // Journal of Applied Physics;5/1/1991, Vol. 69 Issue 9, p6612 

    Presents a study that observed stimulated emission in molecular-beam epitaxially (MBE) grown films of cadmium telluride. Background on cadmium telluride; Methods used to prepare the MBE samples; Analysis of backscattering data taken at a pump wavelength of 700 nm at different pump powers;...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics