TITLE

Effect of post-oxidation anneal on ultrathin SiO2 gate oxides

AUTHOR(S)
Arienzo, Maurizio; Dori, Leonello; Szabo, Thomas N.
PUB. DATE
October 1986
SOURCE
Applied Physics Letters;10/20/1986, Vol. 49 Issue 16, p1040
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Ultrathin silicon oxide films 5–6 nm thick have been grown in a double-walled furnace and annealed in N2 and Ar at temperatures varying between 850 and 1100 °C. The breakdown field distribution obtained is very tight and centered above 11 MV/cm for as-grown oxides at 850 °C. The oxides that received a post-oxidation anneal (POA) at 1000 °C show a consistent improvement in breakdown field distribution and breakdown charge density as compared to the oxides annealed at lower temperatures. Furthermore, under high field current stress, oxides with a POA at 1000 °C show a positive voltage flatband Vfb shift, while oxides with POA at a temperature T<1000 °C show a negative Vfb shift. These results point out the efficacy of a high-temperature POA of 5–6 nm oxides on breakdown strength and on the reduction of some defects responsible for the positive charge trapping.
ACCESSION #
9821119

 

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