Activated carrier density profile and scattering rate measurements of implanted and annealed silicon using infrared attenuated total reflection

Young, Jeff F.; Jensen, H. R.; Simard-Normandin, Martine
October 1986
Applied Physics Letters;10/20/1986, Vol. 49 Issue 16, p1031
Academic Journal
A nondestructive infrared attenuated total reflection technique for measuring activated carrier density profiles and elastic scattering rates of ion implanted and annealed semiconductor wafers is described. The results obtained using this technique on annealed B and BF2 implanted Si wafers are presented and compared with the respective secondary ion mass spectroscopy and spreading resistance profiles.


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