TITLE

Activated carrier density profile and scattering rate measurements of implanted and annealed silicon using infrared attenuated total reflection

AUTHOR(S)
Young, Jeff F.; Jensen, H. R.; Simard-Normandin, Martine
PUB. DATE
October 1986
SOURCE
Applied Physics Letters;10/20/1986, Vol. 49 Issue 16, p1031
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A nondestructive infrared attenuated total reflection technique for measuring activated carrier density profiles and elastic scattering rates of ion implanted and annealed semiconductor wafers is described. The results obtained using this technique on annealed B and BF2 implanted Si wafers are presented and compared with the respective secondary ion mass spectroscopy and spreading resistance profiles.
ACCESSION #
9821101

 

Related Articles

  • Batch size effects on 300-mm ion implant productivity. Current, Michael I. // Solid State Technology;Sep96, Vol. 39 Issue 9, p192 

    Discusses the impact of the number of wafers in a transfer lot, system geometry and batch size on 300 millimeter ion implant productivity. Impact of the use of dummy wafers on implant operations; Three cases where no dummies are needed in routine operations; Impact of the choice of cassette lot...

  • A new era for high-current, low-energy ion implantation. Parrill, Thomas M.; Ameen, Michael S.; Graf, Michael; Mazzola, Richard // Solid State Technology;Nov2000, Vol. 43 Issue 11, p103 

    Examines basic issues associated with delivering low-energy ions to silicon wafers. Details on the delivery and control of low-energy ions; Information on the process control in ion implantation; Conclusion.

  • Japanese companies design multifunction minifab tools. Okumura, Katsuya; Mikata, Yu-ichi; Suguro, Kyoichi; Tsunashima, Yoshitaka; Shimazaki, Ayako // Solid State Technology;Jun2001, Vol. 44 Issue 6, p83 

    Focuses on a plan for the technologies and equipment required for a semiconductor minifab. Capabilities of the multifunctional thermal processing; Functions of stencil mask ion implantation in reducing process time and cost of complex system chips; Way to protect the wafers from contamination.

  • A Long-Range Influence of the Argon-Ion Irradiation on the Silicon Nitride Layers Formed by the Ion Implantation. Demidov, E. S.; Karzanov, V. V.; Lobanov, D. A.; Markov, K. A.; Sdobnyakov, V. V. // Semiconductors;Jan2001, Vol. 35 Issue 1, p20 

    The effect of stimulating synthesis reactions for the Si[sub 3]N[sub 4] phase in nitrogen-enriched silicon layers under the influence of argon-ion implantation into the rear side of silicon wafers was investigated. Dependences of variations in the IR absorption and the resistivity of the...

  • Epi replacement in manufacturing using MeV implantation. Borland, John O.; Seidel, Thomas E. // Solid State Technology;Jun96, Vol. 39 Issue 6, p89 

    Demonstrates superior latch-up performance and equivalent silicon surface quality to that of p/p+ epi wafers, using MeV ion implantation and Cz bulk wafer denuding/gettering techniques. Bulk(non-epi) wafer's direct replacement of epi wafers in manufacturing; Comparison of latch-up performance...

  • Charge control for high-current ion implant. Erokhin, Yuri; Reece, Ronald N. // Solid State Technology;Jun97, Vol. 40 Issue 6, p101 

    Discusses optimum conditions for semiconductor wafer-charging control during ion implantation. Inherent limitations of beam neutralization through residual gas ionization; Comparison of plasma electron flood (PEF) and secondary electron flood (SEF); Development of a test that determines whether...

  • Ion-cut silicon-on-insulator fabrication with plasma immersion ion implantation. Xiang Lu; Iyer, S. Sundar Kumar // Applied Physics Letters;11/10/1997, Vol. 71 Issue 19, p2767 

    Describes an ion-cut-silicon-on-insulator wafer fabrication technique with plasma immersion ion implantation (PIII). Relationship between the hydrogen implantation rate and the wafer size; Features of the PIII reactor; Feasibility of the PIII ion-cut process.

  • Resonance ultrasonic vibrations in Cz-Si wafers as a possible diagnostic technique in ion implantation. Zhao, Z. Y.; Ostapenko, S.; Anundson, R.; Tvinnereim, M.; Belyaev, A.; Anthony, M. // AIP Conference Proceedings;2001, Vol. 576 Issue 1, p1036 

    The semiconductor industry does not have effective metrology for well implants. The ability to measure such deep level implants will become increasingly important as we progress along the technology road map. This work explores the possibility of using the acoustic whistle effect on ion...

  • Transfer From Rs-based To PMOR-based Ion Implantation Process Monitoring. Smets, Gerrit; Rosseel, Erik; Sterckx, Gunther; Bogdanowicz, Janusz; Vandervorst, Wilfried; Shaughnessy, Derrick // AIP Conference Proceedings;1/7/2011, Vol. 1321 Issue 1, p426 

    We report on the transfer from a sheet resistance (Rs) based SPC monitoring towards a monitoring based on Photomodulated Optical Reflectance (PMOR) with the KLA-Tencor Therma-Probe® 630XP-system. In order to assess the monitoring feasibility using PMOR, we determined the dose sensitivity for...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics