Hydrogen-free SiN films deposited by ion beam sputtering

Kitabatake, Makoto; Wasa, Kiyotaka
October 1986
Applied Physics Letters;10/13/1986, Vol. 49 Issue 15, p927
Academic Journal
A hydrogen-free SiN film was deposited by ion beam sputtering at low temperature. The substrate surface was almost parallel to the ion beam. The deposited SiN film exhibited high chemical endurance, high thermal endurance, and low density of memory traps.


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