TITLE

Hydrogen-free SiN films deposited by ion beam sputtering

AUTHOR(S)
Kitabatake, Makoto; Wasa, Kiyotaka
PUB. DATE
October 1986
SOURCE
Applied Physics Letters;10/13/1986, Vol. 49 Issue 15, p927
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A hydrogen-free SiN film was deposited by ion beam sputtering at low temperature. The substrate surface was almost parallel to the ion beam. The deposited SiN film exhibited high chemical endurance, high thermal endurance, and low density of memory traps.
ACCESSION #
9821091

 

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