Correlation of stress with light-induced defects in hydrogenated amorphous silicon films

Kurtz, Sarah R.; Tsuo, Y. Simon; Tsu, Raphael
October 1986
Applied Physics Letters;10/13/1986, Vol. 49 Issue 15, p951
Academic Journal
No correlation was found between the stress in hydrogenated amorphous silicon films and the light-induced effect, as measured by the photoconductivity. An equation is derived for calculation of the external stress applied to a film. The light-induced degradation in a ‘‘zero-stress’’ film (one removed from the substrate) was shown to be equivalent to that of an as-deposited film.


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