Effect of temperature during illumination on annealing of metastable dangling bonds in hydrogenated amorphous silicon

Jackson, W. B.; Stutzmann, M.
October 1986
Applied Physics Letters;10/13/1986, Vol. 49 Issue 15, p957
Academic Journal
Annealing of metastable dangling bond defects in light-soaked undoped hydrogenated amorphous silicon (a-Si:H) is investigated in samples which have been illuminated at different temperatures. Based on a monomolecular annealing model, the distribution of activation energies is determined. The annealing distribution narrows and shifts to higher energies as the temperature during illumination is increased.


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