TITLE

Growth of ultrapure InP by atmospheric pressure organometallic vapor phase epitaxy

AUTHOR(S)
Chen, C. H.; Kitamura, M.; Cohen, R. M.; Stringfellow, G. B.
PUB. DATE
October 1986
SOURCE
Applied Physics Letters;10/13/1986, Vol. 49 Issue 15, p963
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the growth and characterization of ultrapure InP using trimethylindium and phosphine by atmospheric pressure organometallic vapor phase epitaxy (APOMVPE). The 77 K mobility of 131 000 cm2 /V s is the highest ever obtained by APOMVPE and among the highest ever measured for InP using any growth technique. The low-temperature photoluminescence measurements reveal that impurity reduction occurs at higher growth temperatures.
ACCESSION #
9821077

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics