Interdiffusion and wavelength modification in In0.53Ga0.47As/ In0.52Al0.48As quantum wells by lamp annealing

Seo, K. S.; Bhattacharya, P. K.; Kothiyal, G. P.; Hong, S.
October 1986
Applied Physics Letters;10/13/1986, Vol. 49 Issue 15, p966
Academic Journal
In0.53Ga0.47As/ In0.52Al0.48As single quantum well structures grown by molecular beam epitaxy were pulse annealed by a halogen lamp to determine the stability of their optical properties after such thermal treatment. The annealing time and temperature were 5 s and 650–850 °C, respectively. The shift in energy of the main peak in the low-temperature photoluminescence spectra was modeled by considering Al-Ga interdiffusion at the heterointerface and solving the appropriate Schrödinger equation for this region. The estimated interdiffusion constants D are ∼10-16–10-15 cm2/s in this temperature range, which are almost three orders higher than the corresponding values reported for GaAs/ AlxGa1-xAs. For longer annealing times, up to 30 min, the linewidth (full width at half-maximum) of the excitonic transition in the 11 K photoluminescence spectrum continuously decreased from 12.5 to 7.7 meV, while the intensity maintained a high value.


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