Enhancement of film deposition rate due to the production of Si2H6 as an intermediate in the photodecomposition of SiH4 using an ArF excimer laser

Taguchi, Toshihiro; Morikawa, Masato; Hiratsuka, Yasuyuki; Toyoda, Koichi
October 1986
Applied Physics Letters;10/13/1986, Vol. 49 Issue 15, p971
Academic Journal
Deposition of amorphous hydrogenated silicon films (a-Si:H) on a glass substrate by photodissociation of SiH4 using a focused ArF excimer laser beam directed parallel to the substrate has been demonstrated. The rate of film deposition increased with irradiation time at constant laser power, with a fixed initial quantity of reactant gas. This result indicates the formation of Si2H6, which is excited by a single incident photon. The small amount of Si2H6 formed promoted photodecomposition of SiH4.


Related Articles

  • Photodissociation dynamics in quantum state-selected clusters: A test of the one-atom cage effect in Ar–H2O. Plusquellic, David F.; Votava, Ondrej; Nesbitt, David J. // Journal of Chemical Physics;10/1/1994, Vol. 101 Issue 7, p6356 

    High resolution IR overtone pumping with an injection seeded optical parametric oscillator (OPO) is used in conjunction with excimer laser photolysis to investigate the state-resolved dynamics of quantum state-selected van der Waals clusters in a slit supersonic expansion. The narrow band IR...

  • Two-photon dissociation of HgBr[sub 2] as passive mode locking mechanism of a long-pulse XeCl excimer laser. Efthimiopoulos, T.; Zigos, D. // Applied Physics B: Lasers & Optics;2002, Vol. 75 Issue 4/5, p515 

    Results are presented related to the use of twophoton dissociation of HgBr[sub 2] molecular vapor as a non-linear fast-opening passive mode locker of a long-pulse XeC1 laser. A dye solution, with or without scatterers, is also examined for comparison. Pulses with durations below our resolution...

  • The Dynamics of Annealing of Ion-Amorphized Silicon by Nanosecond Pulses of Excimer Laser UV Radiation. Ivlev, G. D.; Gatskevich, E. I. // Technical Physics Letters;Dec2002, Vol. 28 Issue 12, p988 

    Phase transitions in ion-amorphized silicon annealed by nanosecond UV radiation pulses of an ArF excimer laser were studied by time-resolved reflectivity measurements at λ = 633 nm. It was established that epitaxial crystallization of a melted layer of silicon takes place at a laser energy...

  • Laser ablation and column formation in silicon under oxygen-rich atmospheres. Pedraza, A. J.; Pedraza, A.J.; Fowlkes, J. D.; Fowlkes, J.D.; Lowndes, D. H.; Lowndes, D.H. // Applied Physics Letters;11/6/2000, Vol. 77 Issue 19 

    The microstructure formed at the surface of silicon by cumulative pulsed-laser irradiation in oxygen-rich atmospheres consists of an array of microcolumns surrounded by microcanyons and microholes. Formation of SiO[sub x] at the exposed surface of silicon is most likely responsible for the...

  • Fluorine-enhanced photo-oxidation of silicon under ArF excimer laser irradiation in an O2+NF3 gas mixture. Morita, M.; Aritome, S.; Tanaka, T.; Hirose, M. // Applied Physics Letters;9/22/1986, Vol. 49 Issue 12, p699 

    We have studied fluorine-enhanced oxidation of silicon in an O2+NF3 gas mixture under ArF excimer laser (193 nm) irradiation. An oxide layer of more than 60 Å can be grown even at 400 °C for 20 min at NF3 gas concentrations less than 0.5%. A considerable enhancement of the oxidation rate...

  • Laser photoablation of spin-on-glass. Hogan, Michael; Lunney, James G. // Applied Physics Letters;9/5/1988, Vol. 53 Issue 10, p831 

    The photoablation of a phenylsiloxane spin-on-glass (SOG) (Allied Accuglass 204) in the precured state has been studied at 193 and 248 nm using an excimer laser. The ablation of a 400 nm layer of SOG on silicon was monitored interferometrically using a He-Ne laser. At 193 nm, where the...

  • Whiskerlike structure growth on silicon exposed to ArF excimer laser irradiation. Sa´nchez, F.; Morenza, J. L.; Aguiar, R.; Delgado, J. C.; Varela, M. // Applied Physics Letters;7/29/1996, Vol. 69 Issue 5, p620 

    The effects of ArF excimer laser irradiation on silicon single crystals in air have been studied. The etch rate versus fluence curve shows three well defined zones, with very different etch rates and dependences. In the intermediate zone (from 1.5 to 2.5 J/cm2), narrow (1–2 μm...

  • Evolution of implanted carbon in silicon upon pulsed excimer laser annealing. Ka´ntor, Z.; Fogarassy, E.; Grob, A.; Grob, J. J.; Muller, D.; Pre´vot, B.; Stuck, R. // Applied Physics Letters;8/12/1996, Vol. 69 Issue 7, p969 

    Formation of epitaxial Si1-yCy substitutional alloy layers on monocrystalline silicon surfaces with y≊1 at. % is reported. The preparation method was carbon ion implantation, followed by KrF excimer laser annealing. Results of Rutherford backscattering (RBS), secondary ion mass...

  • Observation of the size-dependent blueshifted electroluminescence from nanocrystalline Si fabricated by KrF excimer laser annealing of hydrogenated amorphous silicon/amorphous-SiN[sub x]:H superlattices. Wang, Mingxiang; Huang, Xinfan; Xu, Jun; Li, Wei; Liu, Zhiguo; Chen, Kunji // Applied Physics Letters;2/9/1998, Vol. 72 Issue 6 

    Nanocrystalline silicon (nc-Si) was fabricated by KrF excimer laser annealing of hydrogenated amorphous silicon/amorphous-SiN[sub x]:H superlattices. A stable and reproducible electroluminescence (EL) based on these structures was observed at room temperature. It was found that the EL peak was...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics