TITLE

Enhancement of film deposition rate due to the production of Si2H6 as an intermediate in the photodecomposition of SiH4 using an ArF excimer laser

AUTHOR(S)
Taguchi, Toshihiro; Morikawa, Masato; Hiratsuka, Yasuyuki; Toyoda, Koichi
PUB. DATE
October 1986
SOURCE
Applied Physics Letters;10/13/1986, Vol. 49 Issue 15, p971
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Deposition of amorphous hydrogenated silicon films (a-Si:H) on a glass substrate by photodissociation of SiH4 using a focused ArF excimer laser beam directed parallel to the substrate has been demonstrated. The rate of film deposition increased with irradiation time at constant laser power, with a fixed initial quantity of reactant gas. This result indicates the formation of Si2H6, which is excited by a single incident photon. The small amount of Si2H6 formed promoted photodecomposition of SiH4.
ACCESSION #
9821068

 

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