TITLE

Anomalous distance dependence in scanning tunneling microscopy

AUTHOR(S)
Bryant, A.; Smith, D. P. E.; Binnig, G.; Harrison, W. A.; Quate, C. F.
PUB. DATE
October 1986
SOURCE
Applied Physics Letters;10/13/1986, Vol. 49 Issue 15, p936
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this work it is found experimentally that the appearance of surfaces in scanning tunneling microscope (STM) images can change drastically as the distance between the STM tip and sample is varied. Defects are found on gold-sputtered graphite samples which appear as protrusions in charge density when the spacing exceeds a critical value. At smaller distances the protrusions are not evident in the images. It is possible to model these defects as gold atoms which lie just below the surface layer. We discuss possible mechanisms that give rise to the distance dependence.
ACCESSION #
9821044

 

Related Articles

  • Scanning tunneling microscope. Park, Sang-il; Quate, C. F. // Review of Scientific Instruments;Nov87, Vol. 58 Issue 11, p2010 

    This article describes the design of a scanning tunneling microscope (STM) which is suitable for surface science work. Various concepts in mechanical structure and electronic circuitry of the STM have been pursued to optimize its performance. This STM has been designed especially to meet the...

  • Clean GaP(001)-(4x2) and H[sub 2]S-treated (1x2)S surface structures studied by scanning.... Sanada, N.; Shimomura, M. // Applied Physics Letters;9/4/1995, Vol. 67 Issue 10, p1432 

    Examines the use of scanning tunneling microscopy (STM) in the study of clean GaP(001)-(4x2) and H[sub 2]S-treated (1x2)S surface structures. Images of the reconstructed GaAs(100) surface with three gallium dimers; Observations using reflection high-energy electron diffraction; Application of...

  • Ideal hydrogen termination of Si(001) surface by wet-chemical preparation. Morita, Yukinori; Tokumoto, Hiroshi // Applied Physics Letters;10/30/1995, Vol. 67 Issue 18, p2654 

    Prepares a nearly ideal silicon(001) surface by a wet-chemical method. Introduction of the HF:HCl=1:19 solution; Examination of the surface by scanning tunneling microscopy; Suppression of the (111) facet formation.

  • Atomic-scale imaging of insulating diamond through resonant electron injection. Bobrov, Kirill; Mayne, Andrew J.; Dujardin, Gerald // Nature;10/11/2001, Vol. 413 Issue 6856, p616 

    Demonstrates that scanning tunnelling microscopy (STM) can be used in an unconventional resonant electron injection mode to image insulating diamond surfaces and to probe their electronic properties at the atomic scale. Striking features of STM topography; Exceptional feature of the diamond...

  • Imaging of dopants in surface and sub-surface layers of the transition metal dichalcogenides WS[sub 2] and WSe[sub 2] by scanning tunneling microscopy. Matthes, T.W.; Sommerhalter, C.; Rettenberger, A.; Bruker, P.; Boneberg, J.; Lux-Steiner, M.C.; Leiderer, P. // Applied Physics A: Materials Science & Processing;1998, Vol. 66 Issue 7, pS1007 

    Abstract. The van-der-Waals surfaces (0001) of the layered structure semiconductors WS[sub 2] and WSe[sub 2] are known to be free of intrinsic surface states. Therefore, they provide an ideal system for investigations of the influence of individual dopants on the local electronic properties,...

  • Scanning tunneling microscopy study of thermal-diffusion-assisted self-organization on a tungsten crystal surface. Vitukhin, V. Yu.; Zakurdaev, I. V. // Physics of the Solid State;Jun97, Vol. 39 Issue 6, p868 

    The initial stage of faceting on the tungsten (110) vicinal plane during annealing in conditions close to thermodynamic equilibrium or favoring thermal-diffusion-assisted mass transport is studied by scanning tunneling microscopy. In the first case, the initial nanofacets (the traces left after...

  • In-Situ High-Temperature Scanning-Tunneling-Microscopy Studies of Two-Dimensional Island-Decay Kinetics on Atomically Smooth TiN(001). Kodambaka, S.; Petrova, V.; Vailionis, A.; Desjardins, P.; Cahill, D. G.; Petrov, I.; Greene, J. E. // Surface Review & Letters;Oct2000, Vol. 7 Issue 5/6, p589 

    In-situ high-temperature scanning tunneling microscopy was used to follow the coarsening (Ostwald ripening) and decay kinetics of single and multiple two-dimensional TiN islands on atomically flat TIN(001) terraces and in single-atom deep vacancy pits at temperatures of 750-950°C. The...

  • Triangular structures on tungsten diselenide induced and observed by scanning tunneling microscopy. Akari, S.; Moller, R.; Dransfeld, K. // Applied Physics Letters;7/8/1991, Vol. 59 Issue 2, p243 

    Examines the formation of growing triangular structures on tungsten diselenide surface. Use of scanning tunneling microscopy; Application of electrical pulses between the microscope tip and sample; Determination of three-fold oriented diamonds.

  • Nanolithography of chemically prepared Si with a scanning tunneling microscope. Yau, S.-T.; Zheng, X.; Nayfeh, M.H. // Applied Physics Letters;11/4/1991, Vol. 59 Issue 19, p2457 

    Presents the use of scanning tunneling microscope to perform lithography on chemically prepared silicon surfaces. Transition from a Schottky junction behavior to a metal-insulator-semiconductor junction behavior; Formation of the topographic structures; Observation on the cluster size and...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics