High-speed response of a quasi-graded band-gap superlattice p-i-n photodiode

Parker, D. G.; Couch, N. R.; Kelly, M. J.; Kerr, T. M.
October 1986
Applied Physics Letters;10/13/1986, Vol. 49 Issue 15, p939
Academic Journal
The photoresponse to a short optical pulse of a GaAs p-n junction containing an undoped asymmetric GaAs/AlAs superlattice is reported. The response to a light pulse of <400 fs duration has been measured and a rise time of 80 ps is observed. The trailing edge of the response exhibits a long time tail, which is thought to be dominated by the time taken to tunnel through the thickest barrier, being the Γ-Γ separation of the GaAs and AlAs of a 3-nm barrier.


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