TITLE

High-speed response of a quasi-graded band-gap superlattice p-i-n photodiode

AUTHOR(S)
Parker, D. G.; Couch, N. R.; Kelly, M. J.; Kerr, T. M.
PUB. DATE
October 1986
SOURCE
Applied Physics Letters;10/13/1986, Vol. 49 Issue 15, p939
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The photoresponse to a short optical pulse of a GaAs p-n junction containing an undoped asymmetric GaAs/AlAs superlattice is reported. The response to a light pulse of <400 fs duration has been measured and a rise time of 80 ps is observed. The trailing edge of the response exhibits a long time tail, which is thought to be dominated by the time taken to tunnel through the thickest barrier, being the Γ-Γ separation of the GaAs and AlAs of a 3-nm barrier.
ACCESSION #
9821041

 

Related Articles

  • dc and microwave negative differential conductance in GaAs/AlAs superlattices. Sibille, A.; Palmier, J. F.; Wang, H.; Esnault, J. C.; Mollot, F. // Applied Physics Letters;1/15/1990, Vol. 56 Issue 3, p256 

    Negative differential conductance (NDC) at 300 K in n+-nn+-GaAs/AlAs superlattice structures biased perpendicularly to the layers is demonstrated, and shown to be strongly enhanced at microwave frequencies close to the inverse transit time of electrons. The deduced electron velocities are in...

  • Light-hole conduction in InGaAs/GaAs strained-layer superlattices. Schirber, J. E.; Fritz, I. J.; Dawson, L. R. // Applied Physics Letters;1/15/1985, Vol. 46 Issue 2, p187 

    We report the first observation of light-hole band carriers in In0.2Ga0.8As/GaAs strained-layer superlattices by direct measurements of their effective mass (m*mo=0.14) using oscillatory magnetoresistance data. Preferential population of light-hole states, due to splitting of the degenerate bulk...

  • Continuous-wave operation of distributed feedback AlAs/GaAs superlattice quantum-cascade lasers. Schrenk, W.; Finger, N.; Gianordoli, S.; Gornik, E.; Strasser, G. // Applied Physics Letters;11/20/2000, Vol. 77 Issue 21 

    We report on continuous-wave operation of first-order distributed feedback quantum-cascade lasers at λ=11.8 μm, based on interminiband transitions in a chirped AlAs/GaAs superlattice. Short devices operate in continuous-wave up to ∼30 K. The single-mode emission wavelength is...

  • Electron wave interference device with fractional layer superlattices. Tsubaki, Kotaro; Honda, Takashi // Applied Physics Letters;1/28/1991, Vol. 58 Issue 4, p376 

    Focuses on the fabrication of modulation-doped Al[sub 0.3]Ga[sub 0.7]/GaAs heterostructure electron wave interference devices with fractional layer superlattices. Periods of the fractional layer superlattice in the electron wave interference devices; Occurrence of drain current oscillation due...

  • Photovoltaic detection of infrared light in a GaAs/AlGaAs superlattice. Kastalsky, A.; Duffield, T.; Allen, S. J.; Harbison, J. // Applied Physics Letters;4/18/1988, Vol. 52 Issue 16, p1320 

    We report the observation of photovoltaic infrared photodetection in an n-type GaAs/AlGaAs superlattice within the optical range 3.6–6.2 μm. A built-in graded AlGaAs barrier (∼0.2 eV) provides charge polarization in the sample by allowing the optically excited electrons in the...

  • Conditions for uniform growth of GaAs1-xPx superlattices. Blakeslee, A. E.; Kibbler, A.; Wanlass, M. W.; Biefeld, R. M. // Journal of Applied Physics;8/1/1986, Vol. 60 Issue 3, p1206 

    Describes the conditions required for the uniform growth of GaAs[sub1-x]P[subx] superlattices. Compatibility among the layers of the superlattice; Preparation of the gallium arsenide substrates; Distortions observed in the growing of the superlattices.

  • Impurity induced layer disordering of Si implanted AlxGa1-xAs-GaAs quantum-well heterostructures: Layer disordering via diffusion from extrinsic dislocation loops. Guido, L. J.; Hsieh, K. C.; Holonyak, N.; Kaliski, R. W.; Eu, V.; Feng, M.; Burnham, R. D. // Journal of Applied Physics;2/15/1987, Vol. 61 Issue 4, p1329 

    Deals with a study which examined the impurity-induced layer disordering of Al[subx]Ga[sub1] - [x]arsenic-gallium arsenide quantum-well heterostructures. Experimental procedures; Application of ion implantation to the fabrication process; Structure of superlattice.

  • Raman scattering studies of metalorganic chemical vapor deposition grown GaAs/AlAs superlattices. Hark, S. K.; Weinstein, B. A.; Burnham, R. D. // Journal of Applied Physics;8/1/1987, Vol. 62 Issue 3, p1112 

    Characterizes the gallium arsenide/aluminum arsenic superlattices grown by metalorganic chemical vapor deposition technique by using Raman backscattering. Optic region of Raman spectra obtained with incident light; Stokes and anti-Stokes spectra of a sample showing the zone-folded acoustic...

  • Enhanced radiative decay in disordered GaAs/Al0.3Ga0.7As superlattices. Ranganathan, Radha; Edmondson, K. // Journal of Applied Physics;11/15/1995, Vol. 78 Issue 10, p6181 

    Compares the characteristics of the photoluminescence (PL) from disordered and ordered gallium arsenide/Al[sub0.3]Ga[sub0.7]As superlattices. Presence of exciton in three-dimensional crystal and quantum well; Differences between the behavior of PL in ordered and disordered superlattices;...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics