TITLE

Two-dimensional electron gas in a Ga0.47In0.53As/InP heterojunction grown by chemical beam epitaxy

AUTHOR(S)
Tsang, W. T.; Chang, A. M.; Ditzenberger, J. A.; Tabatabaie, N.
PUB. DATE
October 1986
SOURCE
Applied Physics Letters;10/13/1986, Vol. 49 Issue 15, p960
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Shubnikov–de Haas, quantum Hall effect, and cyclotron resonance measurements revealed the existence of a high mobility, two-dimensional electron gas at the Ga0.47In0.53As/InP heterointerface grown by chemical beam epitaxy. Enhanced electron mobilities were as high as ∼130×103 cm2/V s at 4.2 K. A striking feature in the data which also indicates that the sample is of high quality is the large number of Shubnikov–de Haas oscillation periods observed. Oscillations were observable up to a Landau filling factor of around 50, corresponding to a Landau level index of 25.
ACCESSION #
9821034

 

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