Enhanced injection at silicon-rich oxide interfaces

Chang, K-T.; Rose, K.
October 1986
Applied Physics Letters;10/6/1986, Vol. 49 Issue 14, p868
Academic Journal
The enhanced electron injection of silicon-rich oxide (SRO)/SiO2 interfaces is explained. We find an excellent fit to the current-voltage characteristics of these interfaces by calculating the field enhancement over the surface of oblate spheroids in a uniform applied field. This explains why field enhancement at SRO/SiO2 interfaces tends to be independent of island size and unaffected by annealing.


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