Enhanced injection at silicon-rich oxide interfaces

Chang, K-T.; Rose, K.
October 1986
Applied Physics Letters;10/6/1986, Vol. 49 Issue 14, p868
Academic Journal
The enhanced electron injection of silicon-rich oxide (SRO)/SiO2 interfaces is explained. We find an excellent fit to the current-voltage characteristics of these interfaces by calculating the field enhancement over the surface of oblate spheroids in a uniform applied field. This explains why field enhancement at SRO/SiO2 interfaces tends to be independent of island size and unaffected by annealing.


Related Articles

  • Dependence of Si-SiO2 interface state density on oxide thickness in structures with ultrathin (79–227 Ã…) oxides. Kar, S.; Shanker, D.; Chari, K. S. // Applied Physics Letters;12/1/1985, Vol. 47 Issue 11, p1203 

    Admittance voltage characteristics of Si/79–227 Å SiO2/metal structures were measured in dark and under optical illumination in the frequency range of 30 Hz–100 kHz. For fabricating the structures, thermal oxidation was carried out in dry oxygen at 900 °C at 1 atm. The...

  • Correlation between dielectric breakdown and charge generation in silicon oxide films. Hayakawa, Tetsuo; Watanabe, Yukihiko // Applied Physics Letters;5/19/1997, Vol. 70 Issue 20, p2699 

    Investigates the correlation between breakdown characteristics and charge generation in silicon oxide films. Mechanism of oxide breakdown; Information on the density of positive charges generated near the cathode interface; Details on the correlation between charge generation in the oxide bulk...

  • Nondestructive measurement of interfacial SiO[sub 2] films formed during deposition and.... Devine, R.A.B. // Applied Physics Letters;4/1/1996, Vol. 68 Issue 14, p1924 

    Measures the interfacial silicon oxide (SiO[sub 2]) layers formed during deposition and annealing of Ta[sub 2]O[sub 5] on silicon (Si) substrates. Deposition of Ta[sub 2]O[sub 5] thin films by plasma enhanced chemical vapor deposition; Presence of Si[sub 2] in Ta[sub 2]O[sub 5] films;...

  • Suppression of silicidation in polycrystalline-Si/ high-κ insulator/SiO2/Si structure by helium through process. Muraoka, Kouichi // Journal of Applied Physics;8/15/2004, Vol. 96 Issue 4, p2292 

    Suppression of silicidation in polycrystalline-Si (poly-Si)/ high-κ insulators (ZrO2,HfO2)/SiO2/Si structure by helium (He) through process which adds He gas during a poly-Si gate process was demonstrated. In Si deposition on ZrO2 and HfO2 by SiH4 flow diluted by N2 or He, surface...

  • Atomic displacement free interfaces and atomic registry in SiO2/(1×1) Si(100). Shaw, Justin M.; Herbots, N.; Hurst, Q. B.; Bradley, D.; Culbertson, R. J.; Atluri, V.; Queeney, K. T. // Journal of Applied Physics;11/15/2006, Vol. 100 Issue 10, p104109 

    We use ion beam analysis to probe the structure and interface of ultrathin thermal oxide films grown on (1×1) Si(100) surfaces prepared using the Herbots-Atluri [U.S. patent No. 6,613,677 (Sept. 2, 2003)] wet chemical clean. We discover that these oxide layers are structurally registered...

  • Current transport properties of SiO2 films containing Ge nanocrystals. Fujii, Minoru; Mamezaki, Osamu; Hayashi, Shinji; Yamamoto, Keiichi // Journal of Applied Physics;2/1/1998, Vol. 83 Issue 3, p1507 

    Presents information pertaining to the electrical transport properties associated with silicon oxide (SiO2) films. What these films contains; Explanation of the observed electrical properties; Preparation of germanium (Ge) nonostructures.

  • Dynamic behavior of negative charge trapping in thin silicon oxide. Haddad, Sameer; Cagnina, Sal // Applied Physics Letters;10/23/1989, Vol. 55 Issue 17, p1747 

    The trapping of negative charges in thin oxide under bipolar and unipolar dynamic stressing is compared. Bipolar stressing causes significantly less trapping than unipolar stressing. The difference is attributed to the enhanced electron detrapping during the bipolar stress. This detrapping...

  • Comparison of excimer laser recrystallized prepatterned and unpatterned silicon films on SiO2. Giust, G.K.; Sigmon, T.W. // Journal of Applied Physics;2/1/1997, Vol. 81 Issue 3, p1204 

    Compares the laser recrystallization of unpatterned and prepatterned silicon films on silicon oxide. Recrystallized grain microstructures; Recrystallization mechanisms; Creation and identification of three well defined zones in the prepatterned films.

  • Evaluation of interface potential barrier heights between ultrathin silicon oxides and silicon. Horiguchi, Seiji; Yoshino, Hideo // Journal of Applied Physics;8/15/1985, Vol. 58 Issue 4, p1597 

    Evaluates the interface potential barrier heights for ultrathin silicon oxides on silicon and effective electron masses in some of the oxides. Sample preparation; Derivation of charging characteristics.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics