HgTe-CdTe superlattices grown on GaAs (100) oriented substrates by molecular beam epitaxy

Ballingall, J. M.; Leopold, D. J.; Wroge, M. L.; Peterman, D. J.; Morris, B. J.; Broerman, J. G.
October 1986
Applied Physics Letters;10/6/1986, Vol. 49 Issue 14, p871
Academic Journal
HgTe-CdTe superlattices have been grown on GaAs (100) substrates by molecular beam epitaxy. X-ray diffraction analysis shows the superlattices to be single crystalline with well defined periods. Temperature-dependent infrared absorbance measurements indicate that the superlattices have band gaps with positive temperature coefficients. The band-gap temperature dependence is in semiquantitative agreement with theoretical calculations.


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