TITLE

Laser direct writing of single-crystal III-V compounds on GaAs

AUTHOR(S)
Karam, N. H.; El-Masry, N. A.; Bedair, S. M.
PUB. DATE
October 1986
SOURCE
Applied Physics Letters;10/6/1986, Vol. 49 Issue 14, p880
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Laser selective chemical vapor deposition and direct writing of GaAs and its ternary alloys with P have been achieved on GaAs substrates. An Ar+ laser is used to locally heat areas where selective deposition is desired on a substrate which is uniformly biased to a temperature in the range of 25–500 °C. Epitaxial growth was achieved by carefully controlling the deposition parameters to reach growth rates low enough, typically 20 Å/s, for the reaction kinetics of the pyrolitic process to take place. Cross-sectional transmission electron microscopy and photoluminescence results indicate that the quality of the deposited material is comparable to that grown with the conventional metalorganic chemical vapor deposition technique.
ACCESSION #
9821000

 

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