Single-mode single-lobe operation of broad area AlxGa1-xAs-GaAs quantum well lasers

Deppe, D. G.; Jackson, G. S.; Holonyak, N.; Hall, D. C.; Burnham, R. D.; Thornton, R. L.; Epler, J. E.; Paoli, T. L.
October 1986
Applied Physics Letters;10/6/1986, Vol. 49 Issue 14, p883
Academic Journal
A buried heterostructure broad area quantum well heterostructure AlxGa1-xAs-GaAs laser diode modified with a small multiple stripe pattern near its center is described that operates single mode and narrow lobe (<2 °) from threshold (Ith) to 2Ith or 3Ith. The broad area (wide stripe) buried heterostructure laser is made by impurity-induced layer disordering.


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