TITLE

Single-mode single-lobe operation of broad area AlxGa1-xAs-GaAs quantum well lasers

AUTHOR(S)
Deppe, D. G.; Jackson, G. S.; Holonyak, N.; Hall, D. C.; Burnham, R. D.; Thornton, R. L.; Epler, J. E.; Paoli, T. L.
PUB. DATE
October 1986
SOURCE
Applied Physics Letters;10/6/1986, Vol. 49 Issue 14, p883
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A buried heterostructure broad area quantum well heterostructure AlxGa1-xAs-GaAs laser diode modified with a small multiple stripe pattern near its center is described that operates single mode and narrow lobe (<2 °) from threshold (Ith) to 2Ith or 3Ith. The broad area (wide stripe) buried heterostructure laser is made by impurity-induced layer disordering.
ACCESSION #
9820998

 

Related Articles

  • Current and Temperature Tuning of Quantum-Well Lasers Operating in 2.0- to 2.4-μm Range. Astakhova, A. P.; Baranov, A. N.; Viset, A.; Imenkov, A. N.; Kolchanova, N. M.; Stoyanov, N. D.; Chernyaev, A.; Yarekha, D. A.; Yakovlev, Yu. P. // Semiconductors;Apr2003, Vol. 37 Issue 4, p485 

    Radiation spectra of GaInAsSb/GaAlAsSb-based quantum-well diode lasers in pulsed and quasicontinuous operation modes were studied in the temperatures range from-10 to +20°C with driving currents varying from 50 to 200 mA. For currents exceeding the threshold value by no more than 30%, a...

  • Short-period (AlAs)(GaAs) superlattice lasers grown by molecular beam epitaxy. Blood, P.; Fletcher, E. D.; Foxon, C. T. // Applied Physics Letters;7/25/1988, Vol. 53 Issue 4, p299 

    We have used short-period all-binary (AlAs)(GaAs) superlattices with layers as thin as three monolayers to synthesize the barrier and cladding regions of GaAs quantum well lasers grown by molecular beam epitaxy. By studying the threshold current of single- and double-well devices as a function...

  • Nonlinear optical transitions of GaAs/AlGaAs asymmetric double-well structures. Kim, E. H.; Shin, Y. H.; Kim, Yongmin; Noh, S. J.; Perry, C. H.; Simmons, J. A.; Crooker, S. A.; Takamasu, T. // Applied Physics Letters;7/17/2006, Vol. 89 Issue 3, p032114 

    A thin AlGaAs barrier (2.5 nm) inserted into a GaAs/AlGaAs single heterojunction formed a square and a wedge-shaped triangular quantum well in the conduction band. In such a structure, the valence band does not have tunnel-coupled energy levels. Hence, the photogenerated valence holes tend to...

  • Anomalous Spin–Orbit Effects in a Strained InGaAs/InP Quantum Well Structure. Studenikin, S. A.; Coleridge, P. T.; Poole, P.; Sachrajda, A. // JETP Letters;3/25/2003, Vol. 77 Issue 6, p311 

    There is currently a large effort to explore spin-orbit effects in semiconductor structures with the ultimate goal of manipulating electron spins with gates. A search for materials with large spin-orbit coupling is therefore important. We report results of a study of spin-orbit effects in a...

  • Parametric study of Ga[sub 1-x]In[sub x]N[sub y]As[sub 1-y]/GaAs quantum wells for 1.3-μm laser operation. Chow, W. W.; Harris, J. S. // Applied Physics Letters;3/17/2003, Vol. 82 Issue 11, p1673 

    A microscopic laser theory was used to investigate gain properties in Ga[sub 1-x]In[sub x]N[sub y]As[sub 1-y]/GaAs quantum wells. We considered combinations of x and y giving laser emission around 1.30 μm. Optical properties affecting laser threshold and dynamical response are described for...

  • Ultrashort, nonlinear, optical time response of Fe-doped InGaAs/InP multiple quantum wells in 1.55-μm range. Guézo, M.; Loualiche, S.; Even, J.; Le Corre, A.; Folliot, H.; Labbé, C.; Dehaese, O.; Dousselin, G. // Applied Physics Letters;3/17/2003, Vol. 82 Issue 11, p1670 

    Pump-probe experiments are used to characterize Fe-doped InGaAs/InP multiple quantum wells for ultrafast saturable absorption applications. Sample photoresponse time is well controlled by iron doping from the nanosecond range to a value as short as 0.45 ps for an iron concentration of 6 ×...

  • Electron-beam-induced segregation in InGaN/GaN multiple-quantum wells. O'Neill, J.P.; Ross, I.M.; Cullis, A.G.; Wang, T.; Parbrook, P.J. // Applied Physics Letters;9/8/2003, Vol. 83 Issue 10, p1965 

    We report a study of the morphology and composition of In[sub x]Ga[sub 1-x]N/GaN multiple-quantum-well structures and their sensitivity to electron-beam damage. We have employed high-resolution transmission electron microscopy, energy dispersive x-ray analysis, and scanning transmission electron...

  • Infrared spectrophotometry of carbon-induced localized vibrational mode in indium-doped liquid-encapsulated Czochralski GaAs. Kitagawara, Y.; Itoh, T.; Noto, N.; Takenaka, T. // Applied Physics Letters;3/24/1986, Vol. 48 Issue 12, p788 

    Infrared absorption measurements are performed for a carbon-induced localized vibrational mode in indium-doped semi-insulating GaAs crystals. Increase of the indium concentration in GaAs is found to result in a shift of the absorption peak to the lower energy side and a broadening of full width...

  • Optical properties of InGaAs-InP single quantum wells grown by atmospheric pressure metalorganic chemical vapor deposition. Skolnick, M. S.; Tapster, P. R.; Bass, S. J.; Apsley, N.; Pitt, A. D.; Chew, N. G.; Cullis, A. G.; Aldred, S. P.; Warwick, C. A. // Applied Physics Letters;5/26/1986, Vol. 48 Issue 21, p1455 

    Low-temperature photoluminescence and photoconductivity studies of high quality InGaAs-InP quantum wells grown by metalorganic chemical vapor deposition at atmospheric pressure are reported. The best luminescence linewidth obtained for a 100-Ã… well is found to be 7.9 meV. The residual line...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics