Internal thermal stress distribution in InGaAsP/InP lasers

Liu, J. M.; Chen, Y. C.; Wayne, S. F.
October 1986
Applied Physics Letters;10/6/1986, Vol. 49 Issue 14, p895
Academic Journal
The two-dimensional distribution of the internal thermal stress in the active layer of a buried heterostructure InGaAsP/InP laser is calculated with the finite-element method for active regions of both rectangular and crescent shapes. The shape and the finite width of the stripe cause nonuniform distribution of the thermal stress in the active layer. The results show different distributions for these two shapes, particularly near the edges of the active regions. Large stress and stress gradient are found around the tips of the crescent, which may imply problems such as defects and mode instability in real devices.


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