Characterization of epitaxial (Ca,Ba)F2 films on Si(111) substrates

Wittmer, M.; Smith, D. A.; Segmüller, Armin; Zogg, H.; Melchior, H.
October 1986
Applied Physics Letters;10/6/1986, Vol. 49 Issue 14, p898
Academic Journal
We have investigated epitaxial BaF2/CaF2 bilayers on Si(111) with ion channeling, grazing-incidence x-ray diffraction, and transmission electron microscopy. The BaF2 layer, which was grown on a thin intermediate CaF2 layer, showed a channeling minimum yield of 8% and a residual strain of 0.2%. Regions of BaF2 with a mosaic spread in orientation were observed but otherwise the epitaxial quality of the fluoride bilayer was found to be very good.


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