Formation of CoNbZr films by a dc opposing-target sputtering method

Miura, Michiyori; Tanaka, Katsuyuki; Itegami, Hitoshi
October 1986
Applied Physics Letters;10/6/1986, Vol. 49 Issue 14, p901
Academic Journal
CoNbZr films were prepared using dc opposing-target sputtering equipment. It was investigated as to how the sputtering gas pressure influences the characteristics of the films under the condition of constant deposition rate. The saturation flux density and crystallization temperature were almost constant and independent of the sputtering gas pressure. Their values were 0.83±0.03 T and 562±1 °C. However, the anisotropy field, coercive force, and morphology of the films were significantly affected by the sputtering gas pressure.


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