Enhancement mode InP metal-insulator-semiconductor field-effect transistors grown by chemical beam epitaxy

Antreasyan, A.; Tsang, W. T.; Garbinski, P. A.
October 1986
Applied Physics Letters;10/6/1986, Vol. 49 Issue 14, p874
Academic Journal
We have fabricated enhancement mode InP metal-insulator-semiconductor field-effect transistors having extrinsic transconductances of 64 mS/mm for a gate length of 2 μm. The epitaxial layers for the structure have been grown by chemical beam epitaxy. The field-effect transistors exhibit effective mobilities of 1235 cm2/ V s and an average drift velocity of 1.12×107 cm/s. These results are in good agreement with state of the art InP metal-insulator-semiconductor field-effect transistor technology.


Related Articles

  • Current drift mechanism in In0.53Ga0.47As depletion mode metal-insulator field-effect transistors. Taillepied, M.; Gourrier, S. // Applied Physics Letters;4/14/1986, Vol. 48 Issue 15, p978 

    A study of current drift phenomena of InGaAs depletion mode metal-insulator field-effect transistors fabricated with plasma enhanced chemical vapor deposited Si3N4 is reported for the first time. The data indicate that the current varies logarithmically versus time and that the capture mechanism...

  • A new field-effect transistor based on the metal–insulator transition. Katayama, Kozo; Hisamoto, Digh; Nakamura, Yoshitaka; Kobayashi, Nobuyoshi; Nagai, Ryo // Journal of Applied Physics;3/1/1996, Vol. 79 Issue 5, p2542 

    Provides information on a study that proposed a field-effect transistor based on the metal-insulator transition expected to occur in the system of tunnel junction arrays. Details on the device structure and operation principles; Information on the Coulomb blockade in tunnel junction network;...

  • A field effect transistor based on the Mott transition in a molecular layer. Zhou, C.; Newns, D.M. // Applied Physics Letters;2/3/1997, Vol. 70 Issue 5, p598 

    Analyzes the behavior of a Mott transition field effect transistor (FET) device based on Mott metal-insulator transition in a molecular layer. FET-like characteristics of the device; Feasibility of the device function down to nanoscale dimensions; Implementation of the device with a class of...

  • Optical-field-induced current in dielectrics. Schiffrin, Agustin; Paasch-Colberg, Tim; Karpowicz, Nicholas; Apalkov, Vadym; Gerster, Daniel; Mühlbrandt, Sascha; Korbman, Michael; Reichert, Joachim; Schultze, Martin; Holzner, Simon; Barth, Johannes V.; Kienberger, Reinhard; Ernstorfer, Ralph; Yakovlev, Vladislav S.; Stockman, Mark I.; Krausz, Ferenc // Nature;1/3/2013, Vol. 493 Issue 7430, p70 

    The time it takes to switch on and off electric current determines the rate at which signals can be processed and sampled in modern information technology. Field-effect transistors are able to control currents at frequencies of the order of or higher than 100?gigahertz, but electric...

  • Three-state quantum dot gate field-effect transistor in silicon-on-insulator. Karmakar, Supriya; Gogna, Mukesh; Suarez, Ernesto; Jain, Faquir C. // IET Circuits, Devices & Systems;2015, Vol. 9 Issue 2, p111 

    This paper presents the observation of intermediate state in the quantum dot gate field-effect transistors (QDGFETs) in silicon-on-insulator (SOI) substrate. Silicon dioxide (SiO2)-cladded silicon (Si) quantum dots (QDs) are site-specifically selfassembled on the top of SiO2 tunnel gate...

  • TWO-DIMENSIONAL HOLES IN GaAs HIGFETs:: FABRICATION METHODS AND TRANSPORT MEASUREMENTS. HUANG, JIAN; NOVIKOV, D. S.; TSUI, D. C.; PFEIFFER, L. N.; WEST, K. W. // International Journal of Modern Physics B: Condensed Matter Phys;4/10/2007 Part 1 of 2, Vol. 21 Issue 8/9, p1219 

    We present a fabrication process and results of transport measurements of a number of p-channel heterojunction-insulated-gate field-effect transistors (HIGFETs). Without intentional doping in HIGFETs, the disorder is likely to be less than that in the modulation-doped samples. We established a...

  • Observation of the apparent metal–insulator transition of high-mobility two-dimensional electron system in a Si/Si[sub 1-x]Ge[sub x] heterostructure. Lai, K.; Pan, W.; Tsui, D.C.; Ya-Hong Xie // Applied Physics Letters;1/12/2004, Vol. 84 Issue 2, p302 

    Field-effect transistors are fabricated from the Si/Si[sub 1-x]Ge[sub x] heterostructures. The density of the two-dimensional electron system (2DES) in the strained Si quantum well can be controllably tuned from 2.13×10[sup 11] to 4.24×10[sup 11] cm[sup -2]. The temperature dependence of...

  • Threshold voltage drift of InP n-channel enhancement mode metal-insulator-semiconductor field-effect transistors. Johnson, J. G.; Forrest, S. R.; Zeisse, C. R.; Nguyen, R. // Applied Physics Letters;2/8/1988, Vol. 52 Issue 6, p495 

    The drift of drain-to-source current in enhancement mode InP-based metal-insulator-semiconductor field-effect transistors is analyzed. We simultaneously measure the time dependence of both the drain-to-source current (IDS) and the transconductance of these devices when operated in the saturation...

  • Resistance fluctuations near the ‘metal-to-insulator’ transition in the 2DEG in a Si-MOSFET. Kretinin, A. V.; Mayorov, A. S.; Roshko, S. H.; Savchenko, A. K.; Kvon, Z. D. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p595 

    We study 1/f-noise in the 2DEG of a Si-MOSFET which shows the apparent MIT: the change of the sign of dR/dT with decreasing carrier density. In addition to an increase of noise with decreasing electron density we have observed a dip in the noise power near the MIT. We discuss the role of the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics