TITLE

Enhancement mode InP metal-insulator-semiconductor field-effect transistors grown by chemical beam epitaxy

AUTHOR(S)
Antreasyan, A.; Tsang, W. T.; Garbinski, P. A.
PUB. DATE
October 1986
SOURCE
Applied Physics Letters;10/6/1986, Vol. 49 Issue 14, p874
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have fabricated enhancement mode InP metal-insulator-semiconductor field-effect transistors having extrinsic transconductances of 64 mS/mm for a gate length of 2 μm. The epitaxial layers for the structure have been grown by chemical beam epitaxy. The field-effect transistors exhibit effective mobilities of 1235 cm2/ V s and an average drift velocity of 1.12×107 cm/s. These results are in good agreement with state of the art InP metal-insulator-semiconductor field-effect transistor technology.
ACCESSION #
9820974

 

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