Low-loss electron images of uncoated photoresist in the scanning electron microscope

Wells, Oliver C.
September 1986
Applied Physics Letters;9/29/1986, Vol. 49 Issue 13, p764
Academic Journal
Low voltage scanning electron microscopy is an important part of microelectronic inspection technique. This makes it possible to examine devices without changing the electrical properties, and to examine nonconducting samples such as photoresist without the use of a surface metal layer. The secondary electron imaging method suffers, however, from the difficulty that the image can be spoiled by slight charging of the specimen by the incident electron beam. This problem can be solved by the use of the low-loss electron image.


Related Articles

  • Sub-30 nm lithography with near-field scanning optical microscope combined with femtosecond laser. Lin, Y.; Hong, M.H.; Wang, W.J.; Law, Y.Z.; Chong, T.C. // Applied Physics A: Materials Science & Processing;2005, Vol. 80 Issue 3, p461 

    We report direct laser writing of lithography patterns with a feature width of 20±5 nm on thin photoresist film by combining a double-frequency femtosecond laser and a near-field scanning optical microscope. The obtained feature size is much smaller than the laser wavelength (?) and the...

  • Fabrication of freely suspended nanostructures by nanoimprint lithography. Huang, C. C.; Ekinci, K. L. // Applied Physics Letters;2/27/2006, Vol. 88 Issue 9, p093110 

    We describe an innovative approach to fabricate freely suspended nanometer-scale structures. In this approach based on nanoimprint lithography, the imprint polymer serves as both the pattern mask and the sacrificial layer. The fabrication involves imprinting the pattern to be suspended upon an...

  • Optimization of cleanliness and oxidation in plasma doped photoresist strip. DeLuca, J.; Lee, A. B.; Jin, S. W.; Jang, I. S.; Hou, J.; Mattson, D.; Luo, S.; Scuderi, A.; Yang, Y. J.; Berry, I.; Roh, D. // AIP Conference Proceedings;Nov2012, Vol. 1496 Issue 1, p292 

    SEM, AES and SIMS were used to characterize the behavior of plasma doped photoresist when exposed to three plasma strip chemistries. This methodology coupled with further investigation was used to propose a candidate for minimizing post plasma doping strip residues and increasing device yield...

  • The impact of airborne molecular bases on DUV photoresists. Ruede, David; Ereken, Monique; Borgers, Tom // Solid State Technology;Aug2001, Vol. 44 Issue 8, p63 

    Compares the sensitivities of commercially available deep ultraviolet resists to a number of airborne molecular bases. Selection of photoresists used in the comparison; Data analysis; Test procedure.

  • PEB process in a CA resist. Hinsberg, William; Hoffnagle, John; Houle, Frances // Solid State Technology;Aug2000, Vol. 43 Issue 8, p95 

    Presents information on a study which examined the chemistry and physics of post-exposure bake process of a chemically amplified photoresist material developed for DUV lithography in semiconductor-manufacturing. Methodology of the study; Results and discussion on the study; Implications.

  • Enhancing electron field emission of carbon nanoflakes by hydrogen post-annealing process. Wen-Ching Shih; Jian-Min Jeng; Chin-Tze Huang; Jyi-Tsong Lo // Journal of Materials Science: Materials in Electronics;Sep2011, Vol. 22 Issue 9, p1269 

    In this study, the carbon nanoflakes (CNFs) fabricated by sputtering were chosen as the field emission emitters because of their very sharp and thin edges which are potentially good electron field emission sites. The as-deposited CNFs were annealed in the furnace under hydrogen atmosphere. The...

  • Rapid synthesis of carbon nanotubes via inductive heating. Sosnowchik, Brian D.; Liwei Lin // Applied Physics Letters;11/6/2006, Vol. 89 Issue 19, p193112 

    A rapid yet simple methodology to synthesize carbon nanotubes (CNTs) in a room temperature environment has been demonstrated using an inductive heating system. Substrates of either heavily doped silicon or nickel-coated, lightly doped silicon have been used to synthesize CNTs using Fe as the...

  • Structural and electrical properties of thermally evaporated 1,4-Bis-(2-hydroxyethylamino)-9,10-anthraquinone films. Bedi, R. K.; Bhatia, Sonik; Kaur, Navneet; Kumar, Subodh // Journal of Materials Science: Materials in Electronics;Aug2008, Vol. 19 Issue 8/9, p841 

    Nowadays applications of organic materials as the active element in microelectronic devices is broadly investigated. In the present paper, 1,4-Bis-(2-hydroxyethylamino)-9,10-anthraquinone compound has been synthesized. The films of this compound has been deposited by thermal evaporation...

  • Alternating-current induced thermal fatigue of gold interconnects with nanometer-scale thickness and width. Sun, Lijuan; Ling, Xue; Li, Xide // Review of Scientific Instruments;Oct2011, Vol. 82 Issue 10, p103903 

    With dramatic reduction in sizes of microelectronic devices, the characteristic width and thickness of interconnects in large-scale integrated circuits have reached nanometer scale. Thermal fatigue damage of so small interconnects has attracted more and more attentions. In this work, thermal...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics