Cross-sectional transmission electron microscope observation of step-band formation on GexSi1-x(111) vicinal surfaces

Tatsumi, Toru; Aizaki, Naoaki
September 1986
Applied Physics Letters;9/29/1986, Vol. 49 Issue 13, p776
Academic Journal
The Ge0.1Si0.9 surface and the Ge0.1Si0.9/Si interface on the Si(111) 4° off substrate were observed by a cross-sectional transmission electron microscope. The Ge0.1Si0.9 surface grown at 750 °C was composed of alternate planes of (111) terraces and step bands, whose widths in the <112> direction were about 450 and 150 Å, respectively. A step band was formed by steps several monolayers high. On the other hand, the Ge0.1Si0.9/Si interface was very flat and the step bands were not formed in the Si on Si homoepitaxy process at 750 °C.


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