Structural stability and selectivity of thin epitaxial semiconductors

Mbaye, A. A.; Zunger, Alex; Wood, D. M.
September 1986
Applied Physics Letters;9/29/1986, Vol. 49 Issue 13, p782
Academic Journal
It is shown how the availability of structural degrees of freedom in various ternary AnB4-nC4 adamantine semiconductors can lead to their energetic stabilization when grown epitaxially, and how the substrate strain can preferentially stabilize one structure over another even when the two are equally stable (or unstable) in bulk form.


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