TITLE

Optical characterization of InGaAs-InAlAs strained-layer superlattices grown by molecular beam epitaxy

AUTHOR(S)
Nishi, Kenichi; Hirose, Kazuyuki; Mizutani, Takashi
PUB. DATE
September 1986
SOURCE
Applied Physics Letters;9/29/1986, Vol. 49 Issue 13, p794
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
InGaAs-InAlAs strained-layer superlattices, with both controlled strain magnitude and direction in the narrower gap layers, were grown by molecular beam epitaxy. Exciton related peaks and steplike structures in transmission spectra were clearly observed even at room temperature. The close agreement of these observed peak positions with theoretical calculations indicates that heavy-hole and light-hole level reversal was attained in the tensile-strained narrower gap layers.
ACCESSION #
9820943

 

Related Articles

  • Temperature dependence of electron mobility in (InAs)3(GaAs)1 superlattices. Matsui, Y.; Hayashi, H.; Yoshida, K. // Applied Physics Letters;4/21/1986, Vol. 48 Issue 16, p1060 

    (InAs)3(GaAs)1 superlattices have been obtained successfully by the beam separation method of molecular beam epitaxy. The superlattice structure has been confirmed by lattice images and satellite spots of transmission electron microscopy. The electron mobilities of the superlattices are higher...

  • Optical properties and Stokes shifts in lamp-annealed InGaAs/GaAs strained layer superlattice. Kothiyal, Govind P.; Bhattacharya, Pallab // Journal of Applied Physics;4/15/1988, Vol. 63 Issue 8, p2760 

    Investigates the effect of incoherent lamp annealing on the photoluminescence and optical absorption characteristics on In[subx]Ga[sub1-x]As/GaAs strained layer superlattices grown by molecular beam epitaxy. Effect of optimal rapid thermal annealing on the quality of the superlattices in terms...

  • Improved uniformity of epitaxial indium-based compounds by atomic layer epitaxy. Tischler, M. A.; Bedair, S. M. // Applied Physics Letters;8/4/1986, Vol. 49 Issue 5, p274 

    Atomic layer epitaxy (ALE) has been employed to grow InAs and InxGa1-xAs (0

  • Growth of a-plane InN on r-plane sapphire with a GaN buffer by molecular-beam epitaxy. Hai Lu; Schaff, William J.; Eastman, Lester F.; Wu, J.; Walukiewicz, Wladek; Cimalla, Volker; Ambacher, Oliver // Applied Physics Letters;8/11/2003, Vol. 83 Issue 6, p1136 

    We report heteroepitaxial growth of InN on r-plane sapphire substrates with an AlN nucleation layer and GaN buffer using plasma-assisted molecular-beam epitaxy. The InN film was identified to be nonpolar (1120) a-plane which follows the a-plane GaN buffer. Optical absorption and...

  • Spontaneous growth of coherent tilted superlattice on vicinal (100) GaAs substrates. Tsuchiya, M.; Petroff, P. M.; Coldren, L. A. // Applied Physics Letters;4/24/1989, Vol. 54 Issue 17, p1690 

    Periodic Al composition modulations have been observed to occur spontaneously during molecular beam epitaxy of AlGaAs on vicinal (100) substrates. The formation of the spontaneous Al modulation requires (a) the migration-enhanced epitaxy deposition and (b) one monolayer deposition of Al and Ga...

  • Growth temperature dependence of biquadratic coupling in Fe/Cr(100) superlattices studied by polarized neutron reflectivity and x-ray diffraction (abstract). Schäfer, M.; Wolf, J. A.; Grünberg, P.; Ankner, J. F.; Schreyer, A.; Zabel, H.; Majkrzak, C. F. // Journal of Applied Physics;5/15/1994, Vol. 75 Issue 10, p6193 

    Presents an abstract of a study that measured the polarized neutron specular reflectivity of superlattices of nominal composition grown by molecular beam epitaxy.

  • Spectroscopic ellipsometry for characterization of InAs/Ga1-xInxSb superlattices. Wagner, J.; Schmitz, J.; Herres, N.; Fuchs, F.; Walther, M. // Journal of Applied Physics;5/15/1998, Vol. 83 Issue 10, p5452 

    Provides information on an experiment measuring the pseudodielectric function of InAs/Ga1-xInxSb superlattices (SLs) grown by solid-source molecular-beam epitaxy. Methodology used to conduct the experiment; Indepth look at spectroscopic ellipsometry (SE); Results of study.

  • Dependence of Al layer growth mode on Cr underlayer thickness in molecular-beam epitaxy of (001) Al/Cr superlattices. Kingetsu, Toshiki // Journal of Applied Physics;8/15/2000, Vol. 88 Issue 4, p1838 

    Investigates the dependence of aluminum (Al) layer growth on chromium (Cr) underlayer thickness in molecular beam epitaxy of Al/Cr superlattices. Use of in situ reflection high-energy electron and ex situ X-ray diffraction analysis; Dependence of epitaxy on Cr underlayer thickness; Stability of...

  • The growth and structure of short period (001) Hg1-xCdxTe-HgTe superlattices. Becker, C. R.; He, L.; Regnet, M. M.; Kraus, M. M.; Wu, Y. S.; Landwehr, G.; Zhang, X. F.; Zhang, H. // Journal of Applied Physics;8/15/1993, Vol. 74 Issue 4, p2486 

    Presents information on a study which investigated the molecular beam epitaxially grown short period (001) Hg[sub1-x]Cd[subx]Te-HgTe superlattices. Advantage of the superlattices in infrared applications compared to the alloy; Experimental and theoretical details; Results and discussion;...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics