TITLE

Growth of Cd1-xZnxTe by molecular beam epitaxy

AUTHOR(S)
Feldman, R. D.; Austin, R. F.; Dayem, A. H.; Westerwick, E. H.
PUB. DATE
September 1986
SOURCE
Applied Physics Letters;9/29/1986, Vol. 49 Issue 13, p797
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Cd1-xZnxTe has been grown on GaAs substrates for compositions from x=0 to x=1. Binaries are shown to be of high quality, but x-ray rocking curve half-widths are extremely broad for most ternary compositions. Attempts to modify the interface yield only modest and uneven improvement in rocking curve half-widths. The poor quality appears to be due to a phase separation.
ACCESSION #
9820941

 

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