TITLE

Interaction of low-energy implanted atomic H with slow and fast diffusing metallic impurities in Si

AUTHOR(S)
Singh, Ranbir; Fonash, S. J.; Rohatgi, A.
PUB. DATE
September 1986
SOURCE
Applied Physics Letters;9/29/1986, Vol. 49 Issue 13, p800
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The interaction of hydrogen, injected into silicon using low-energy ion bombardment, with slow (Ti and V) and fast (Cr and Au) diffusing impurities was investigated. It was found that this H ion bombardment of the Si surface was effective in reducing the electrically active concentration of only the fast diffusing impurities. The results are explained by damage enhanced diffusivity and surface gettering of the fast diffusing impurities.
ACCESSION #
9820939

 

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