Annealing behavior of Si in ion-implanted α-Ti

Räisänen, J.; Keinonen, J.
September 1986
Applied Physics Letters;9/29/1986, Vol. 49 Issue 13, p773
Academic Journal
The time evolution of the silicon concentration profiles in ion-implanted polycrystalline α-Ti has been studied in the temperature range 650–800 °C. Diffusion couples were created by ion implantation. The time-dependent concentration profiles were monitored by the use of the nuclear resonance broadening technique through the 30Si(p,γ)31P reaction. The values of 1.09±0.18 eV for the activation energy and (4.4±404.0)×10-7 cm2/s for the frequency factor were obtained. The solubilities of Si in Ti are reported. The present result is discussed in the framework of the Ti silicide formation.


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