TITLE

Effect of group V/III flux ratio on deep electron traps in AlxGa1-xAs (x=0.7) grown by molecular beam epitaxy

AUTHOR(S)
Hayakawa, T.; Kondo, M.; Suyama, T.; Takahashi, K.; Yamamoto, S.; Yano, S.; Hijikata, T.
PUB. DATE
September 1986
SOURCE
Applied Physics Letters;9/29/1986, Vol. 49 Issue 13, p788
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The effect of group V/III flux ratio γ on deep electron traps in AlxGa1-xAs (x=0.7) grown by molecular beam epitaxy at 720 °C has been studied by deep level transient spectroscopy. The photoluminescence characteristics of a GaAs single quantum well sandwiched by Al0.7Ga0.3As are determined by the electron traps denoted as E4–E6(E6’) in Al0.7Ga0.3As with the activation energies of 0.77 eV (E4), 0.72 eV (E5), 0.90 eV (E6), and 1.00 eV (E6’). The concentrations of these traps are minimized to the order of 1013 cm-3 at γ∼2 in spite of high Al content.
ACCESSION #
9820904

 

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